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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) DATE: Thu, Nov 9, 2017 10:00 - 16:40 Fri, Nov 10, 2017 10:00 - 16:40 PLACE: TOPICS: Process, Device, Circuit simulation, etc. ---------------------------------------- Thu, Nov 9 AM (10:00 - 12:00) ---------------------------------------- (1) 10:00 - 11:00 [Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) (2) 11:00 - 12:00 [Invited Talk] SISPAD 2017 Review (1) Akira Hiroki (Kyoto Inst. Tech.) ----- Lunch Break ( 65 min. ) ----- ---------------------------------------- Thu, Nov 9 PM (13:05 - 15:30) ---------------------------------------- (3) 13:05 - 13:30 Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) (4) 13:30 - 14:30 [Invited Talk] Impurity Diffusion Modeling in SiC Masashi Uematsu (Keio Univ.) (5) 14:30 - 15:30 [Invited Talk] Characterization and modeling of SiC power MOSFET Takashi Sato, Kazuki Oishi, Masayuki Hiromoto (Kyoto Univ.), Michihiro Shintani (NAIST) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Nov 9 PM (15:40 - 16:40) ---------------------------------------- (6) 15:40 - 16:40 [Invited Talk] GaN MOS capacitance simulation considering deep traps Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) ---------------------------------------- Fri, Nov 10 (10:00 - 12:00) ---------------------------------------- (7) 10:00 - 11:00 [Invited Talk] SISPAD 2017 Review (2) Takashi Kurusu (TMC) (8) 11:00 - 12:00 [Invited Talk] Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities -- Random Dopant Fluctuations and Self-Averaging -- Nobuyuki Sano (Univ. Tsukuba) ----- Lunch Break ( 90 min. ) ----- ---------------------------------------- Fri, Nov 10 PM (13:30 - 15:30) ---------------------------------------- (9) 13:30 - 14:30 [Invited Talk] Quantum Transport Simulation of Ultra-Small Transistors Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) (10) 14:30 - 15:30 [Invited Talk] An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Nov 10 PM (15:40 - 16:40) ---------------------------------------- (11) 15:40 - 16:40 [Invited Talk] A SPICE-compatible SG-MONOS model for 28nm embedded flash macro design considering the parasitic resistance caused by trapped charges Risho Koh, Mitsuru Miyamori, Katsumi Tsuneno, Tetsuya Muta, Yoshiyuki Kawashima (Renesas electronics) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 55 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Dec 22, 2017: Kyoto University [Fri, Oct 13], Topics: Si, Si-related materials, device process, electron devices, and display technology Tue, Jan 30, 2018: Kikai-Shinko-Kaikan Bldg. [unfixed] Thu, Feb 8, 2018: Tokyo Univ. [Mon, Nov 20] Wed, Feb 28, 2018 (changed): Centennial Hall, Hokkaido Univ. [Wed, Dec 20], Topics: Functional nanodevices and related technologies # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:        e3   Last modified: 2018-02-01 21:23:47 |
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