Thu, Jun 7 PM  13:30 - 17:10
(1)	13:30-13:55	Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory SDM2007-31	Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba)
(2)	13:55-14:20	Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films SDM2007-32	Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii (Hitachi)
(3)	14:20-14:45	Measurement Technique of Carrier Mobility in Silicon Nitride and its Application to Data Retention in MONOS Memories SDM2007-33	Kozo Katayama, Kiyoshi Ishikawa (Renesas)
(4)	14:45-15:10	Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD SDM2007-34	Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL)
	15:10-15:30	Break ( 20 min. )
(5)	15:30-15:55	Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 SDM2007-35	Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba)
(6)	15:55-16:20	Statistical Evaluation of Localized Low Gate Current through Tunnel Dielectric using Integrated Array TEG SDM2007-36	Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, Tadahiro Ohmi (Tohoku Univ.)
(7)	16:20-16:45	Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate SDM2007-37	Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.)
(8)	16:45-17:10	Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance SDM2007-38	Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST)
	17:10-17:30	Break ( 20 min. )
	17:30-19:00	Get-together ( 90 min. )
Fri, Jun 8 AM  09:00 - 15:55
(9)	09:00-09:25	Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals SDM2007-39	Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)
(10)	09:25-09:50	Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs SDM2007-40	Masayuki Terai, Shinji Fujieda (NEC)
(11)	09:50-10:15	Modeling of NBTI Degradation for SiON pMOSFET SDM2007-41	Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba)
	10:15-10:30	Break ( 15 min. )
(12)	10:30-10:55	The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift SDM2007-42	Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba)
(13)	10:55-11:20	Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2 SDM2007-43	Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba)
(14)	11:20-11:45	Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals SDM2007-44	Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.)
	11:45-12:45	Lunch Break ( 60 min. )
(15)	12:45-13:10	Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics. SDM2007-45	Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba)
(16)	13:10-13:35	Electrical Properties of Al2O3 Thin Films Prepared by RF Magnetron Sputtering Method SDM2007-46	Yutaka Nishioka, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC)
(17)	13:35-14:00	Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices SDM2007-47	Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo)
	14:00-14:15	Break ( 15 min. )
(18)	14:15-14:40	Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy SDM2007-48	Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
(19)	14:40-15:05	Formation and characterization of Ge$_3$N$_4$ thin layers SDM2007-49	Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.)
(20)	15:05-15:30	Characteristics of HfO2/Ge-nitride/Ge MIS structures SDM2007-50	Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo)
(21)	15:30-15:55	Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates SDM2007-51	Mitsuo Sakashita, Nobuyuki Kito (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.)

Contact Address and Latest Schedule Information
SDM	Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
	Contact Address	Yasushiro Nishioka (Nihon University, College of Science and Technology) TEL047-469-6482,FAX047-467-9504 E-:etn-u,acmsk

Last modified: 2007-04-25 12:03:57