Wed, Jan 11 AM
10:10 - 16:50 |
| |
10:10-10:15 |
Opening Address ( 5 min. ) |
| (1) |
10:15-10:40 |
Microwave Power Beaming Experiments in Tronto and Hawaii for the Solar Power Satellite |
Nobuyuki Kaya, Masashi Iwashita (Kobe Univ.) |
| (2) |
10:40-11:05 |
A Fundamental Study on Super Thin One-Layered Wave Absorber Using a High Dielectric Loss Material in Microwave Band |
Takato Fujita, Yuki Tsuda, Takenori Yasuzumi, Osamu Hashimoto (Aoyama Gakuin Univ.), Takashi Wano, Yuuki Fukuda (NITTO Denko LTD.) |
| (3) |
11:05-11:30 |
A study of CMOS-technology-based millimeterwave LPF/HPF/BPF with transmission zeros by using coupled-line and transmission line |
Kosei Tanii (UEC), Mitsuo Makimoto (Sakura Tech), Sadao Igarashi, Kuniaki Fukui, Kouichi Kobinata (RF Chips), Koji Wada (UEC) |
| (4) |
11:30-11:55 |
Design of a Quasi-Millimeter-Wave Bandpass Filter Using Multilayered SIW Dual-Mode Resonators |
Kazuya Tobita, Zhewang Ma, Masataka Ohira (Saitama Univ.) |
| |
11:55-13:00 |
Lunch Break ( 65 min. ) |
| (5) |
13:00-13:25 |
Band Broadening of Waveguide/Microstrip-line Transformer for Millimeter-wave Band |
Toshitatsu Suzuki, Yozo Utsumi, Noboru Morita, Takefumi Hiraguri (Nippon Inst. of Tech.), Munehiro Yokota, Toshihisa Kamei (NDA), Kiyozumi Chino, Ikurou Aoki, Hirosuke Suzuki (KEYCOM) |
| (6) |
13:25-13:50 |
A System Design Method for Direct Sampling WLAN Receiver |
Noriaki Saito, Yohei Morishita, Tadashi Morita (Panasonic) |
| |
13:50-14:05 |
Break ( 15 min. ) |
| (7) |
14:05-14:30 |
Photon-recycling GaN p+n Diodes |
Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) |
| (8) |
14:30-14:55 |
Modeling and predistortion for harmonic distortion in wideband amplifier |
Nhu Quyen Duong, Kiyomichi Araki (Tokyo Tech), Takayuki Yamada, Takana Kaho, Yo Yamaguchi (NTT) |
| (9) |
14:55-15:20 |
Distortion Compensation of Class-E Power Amplifier Modulating Envelope Pulse Width for Quadrature Amplitude Modulation Signal |
Shota Fujioka, Yohtaro Umeda (Tokyo Univ. of Sience), Osamu Takyu (Shinshu Univ.) |
| (10) |
15:20-15:45 |
Multi-stage Balanced RF Rectifier Circuit |
Kota Yamada, Takashi Arakawa, Masamune Takeda, Jun Uemura (Maspro), Kunio Sakakibara, Nobuyoshi Kikuma (Nagoya Inst. of Tech.), Takashi Ohira (Toyohashi Univ. Tech.) |
| |
15:45-16:00 |
Break ( 15 min. ) |
| (11) |
16:00-16:50 |
[Special Talk]
Simply Structured Spaces and Vector Potentials |
Kaneyuki Kurokawa (Former Fujitsu Lab.) |
Thu, Jan 12 AM
10:10 - 16:50 |
| (12) |
10:10-10:35 |
Study of source charging time in InGaAs MOSFET |
Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech) |
| (13) |
10:35-11:00 |
Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition |
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) |
| (14) |
11:00-11:25 |
A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems |
Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) |
| (15) |
11:25-11:50 |
Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications |
Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) |
| |
11:50-12:50 |
Lunch Break ( 60 min. ) |
| (16) |
12:50-13:15 |
Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs |
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) |
| (17) |
13:15-13:40 |
Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence |
Amalraj Frank Wilson, Akio Wakejima, Takashi Egawa (Nagoya Inst. of Tech.) |
| (18) |
13:40-14:05 |
High temperature device characteristics of AlGaN-Channel HEMTs |
Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) |
| (19) |
14:05-14:30 |
Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures |
Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) |
| (20) |
14:30-14:55 |
High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer |
Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
| |
14:55-15:10 |
Break ( 15 min. ) |
| (21) |
15:10-15:35 |
Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications |
Ken Kikuchi, Fumikazu Yamaki, Kazutaka Inoue (SEI), Masahiro Nishi, Hitoshi Haematsu, Norihiko Ui, Kaname Ebihara, Atsushi Nitta (SEDI), Seigo Sano (SEI) |
| (22) |
15:35-16:00 |
Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates |
Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| (23) |
16:00-16:25 |
X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power |
Osamu Moriya, Kenta Kuroda, Keiichi Matsushita, Tomohide Soejima, Kazutaka Takagi, Shinji Takatsuka (TOSHIBA) |
| (24) |
16:25-16:50 |
High Power X-band 200W AlGaN/GaN HEMT |
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) |
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