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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tanemasa Asano (Kyushu Univ.) Vice Chair: Toshihiro Sugii (Fujitsu)
Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.)

DATE:
Thu, Oct 4, 2007 13:00 - 17:20
Fri, Oct 5, 2007 09:30 - 16:40

PLACE:
New Industry Creation Hatchery Center, tohoku University(6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 Japan. By taking Bus from Sendai station, BUS pool #9, please ride on "Doubutsukouen JUNKAN", "MIYAKYO-DAI" or "AOBA-DAI". The nearest BUS stop for the FFF is "JOUHOUKAGAKUKENKYUUKA MAE(Graduate School of Information Sciences)". http://www.fff.niche.tohoku.ac.jp/en/index.php?%5B%5BMap%5D%5D. Akinobu Teramoto. 022-795-3977)

TOPICS:
Process Science and Novel Process Technologies

----------------------------------------
Thu, Oct 4 PM (13:00 - 17:20)
----------------------------------------

(1) 13:00 - 13:25
Destruction Dynamics and Theoretical Design of MgO Protecting Layer in Plasma
Momoji Kubo, Kazumi Serizawa, Hiromi Kikuchi, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio (Tohoku Univ.), Hiroshi Kajiyama, Tsutae Shinoda (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.)

(2) 13:25 - 13:50
Theoretical Prediction of Kinetic Properties of MgO by Molecular Dynamics Method
Hiroaki Onuma, Kazumi Serizawa, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio (Tohoku Univ.), Hiroshi Kajiyama, Tsutae Shinoda (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.)

(3) 13:50 - 14:15
A Computational Study on Electron Emission from MgO Protecting Layer for Plasma Display Panel.
Kazumi Serizawa, Hiroaki Onuma, Hiromi Kikuchi, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio (Tohoku Univ.), Hiroshi Kajiyama, Tsutae Shinoda (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.)

(4) 14:15 - 14:40
Analysis of Frictional Property of Diamond-like Carbon by New Molecular Dynamics Method
Yusuke Morita, Aodun Qimuge, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (Tohoku Univ.)

(5) 14:40 - 15:05
Influence of Chemical Topology on the Electrical Properties of Carbon Black – A Theoretical Study
Arunabhiram Chutia, Zhigang Zhu, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (Tohoku Univ.)

----- Break ( 10 min. ) -----

(6) 15:15 - 15:40
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
Shigemi Murakawa (Tokyo Electron/Tohoku Univ.), Masashi Takeuchi, Minoru Honda, Shu-ichi Ishizuka, Toshio Nakanishi, Yoshihiro Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka (Tokyo Electron AT), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

(7) 15:40 - 16:05
Development of multi-scale tunnel current simulator
Hideyuki Tsuboi, Kazumi Serizawa, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Del Calpio Carlos (Tohoku Univ.), Hiroshi Kajiyama, Tsutae Shinoda (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.)

(8) 16:05 - 16:30
Development of Multi-Scale Electrical Conductivity Simulator with the Joule Heating Module and its Application to Polycrystalline SiO2
John Paul Yacapin, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (Tohoku Univ.)

(9) 16:30 - 16:55
Ultrathin HfOxNy gate insulator formations utilizing ECR plasma process
Yusuke Nakano, Masaki Satoh, Shun-ichiro Ohmi (Tokyo Tech)

(10) 16:55 - 17:20
Modulation of Dielectric Constant on Mechanically Strained SrTiO3 MIM Capacitor
Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.)

----------------------------------------
Fri, Oct 5 AM (09:30 - 16:40)
----------------------------------------

(11) 09:30 - 09:55
Theoretic Study of Electronic and Electrical Properties for Nano-Structural ZnO
Zhigang Zhu, Arunabhiram Chutia, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(12) 09:55 - 10:20
Tight-Binding Quantum Chemical Molecular Dynamics Study on Interfacial Electron Transfer in Dye-Sensitized Anatase (001) Surface
Chen Lv, Agalya Govindasamy, Kei Ogiya, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (Tohoku Univ.)

(13) 10:20 - 10:45
A Quantum Chemical Molecular Dynamics Study on Formation Process of Diamond-Like Carbon Film
Aodun Qimuge, Yusuke Morita, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (Tohoku Univ.)

----- Break ( 10 min. ) -----

(14) 10:55 - 11:20
The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Low-k Copper Barrier Film
Hiraku Ishikawa (Tokyo Electron/Tohoku Univ.), Toshihisa Nozawa, Takaaki Matsuoka (Tokyo Electron Technology Development Institute), Akinobu Teramoto, Masaki Hirayama, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.)

(15) 11:20 - 11:45
Development of a high efficiency Fluorocarbon abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere
Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda (Taiyo Nippon Sanso Corp.), Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Tadahiro Ohmi (NICHe), Takayuki Watanabe (Ube Material Industries, Ltd.)

(16) 11:45 - 12:10
Development of Multi-scale Simulator for Dye-sensitized Solar Cells
Kei Ogiya, Chen Lv, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (Tohoku Univ.)

----- Lunch Break ( 60 min. ) -----

(17) 13:10 - 13:35
High Mobility Bottom Gate Microcrystalline Si TFT Fabricated by Microwave Plasma CVD
Akihiko Hiroe, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)

(18) 13:35 - 14:00
High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces
Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, Chingfoa Tye, Syunichi Watabe, Tomoyuki Suwa, Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

(19) 14:00 - 14:25
A Study on Improvement of Uniformity for SOI/BOX Layer Formation by SBSI Process
Kouki Notake, Yuichiro Suda, Shun-ichiro Ohmi (Tokyo Tech)

(20) 14:25 - 14:50
Work Function Modulation of PtSi Alloying with Hf
Shun-ichiro Ohmi, Jun Gao, Yusuke Nakano (Tokyo Tech)

----- Break ( 10 min. ) -----

(21) 15:00 - 15:25
Atomic order flatting technology of silicon surface
Tomoyuki Suwa, Rihito Kuroda, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)

(22) 15:25 - 15:50
Shallow Junction Formation Using Combination of LSA and Spike-RTA
Seiichi Endo, Yoshiki Maruyama, Yoji Kawasaki, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas)

(23) 15:50 - 16:15
Statistical Evaluation of Random Telegraph Signal Using a Very Large-scale Array TEG
Kenichi Abe, Shigetoshi Sugawa, Rihito Kuroda, Syunichi Watabe, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)

(24) 16:15 - 16:40
Statistical Evaluation of Characteristics Variability caused by Plasma Processes
Syunichi Watabe, Shigetoshi Sugawa, Kenichi Abe, Takafumi Fujisawa, Naoto Miyamoto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)

# Information for speakers
General Talk (25) will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE ANNOUNCEMENT:
- Please join us for a reception after session on Oct. 4.


=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Tue, Oct 30, 2007 - Wed, Oct 31, 2007: Kikai-Shinko-Kaikan Bldg. [Fri, Aug 10], Topics: Process, Device, Circuit Simulation, etc.
Fri, Nov 16, 2007: [Thu, Sep 20]
Fri, Dec 14, 2007: Nara Institute Science and Technology [Fri, Oct 12], Topics: Silicon related material, process and device
Thu, Jan 24, 2008: Kikai-Shinko-Kaikan Bldg [unfixed], Topics: IEDM special review (Advanced CMOS device and process)
Wed, Jan 30, 2008 - Thu, Jan 31, 2008: [Fri, Nov 9]

# SECRETARY:
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-mail:etn-u,acmsk


Last modified: 2007-08-12 14:46:13


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