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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

DATE:
Fri, Aug 1, 2014 10:30 - 16:40

PLACE:

TOPICS:
Semiconductor Process and Devices (surface, interface, reliability), others

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Fri, Aug 1 AM (10:30 - 12:10)
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(1) 10:30 - 11:20
[Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.)

(2) 11:20 - 11:45
The Theoretical Characteristic and its Experimental Verification of GaAsSb/InGaAs Double-Gate Tunnel FET
Kazumi Ohashi, Motohiko Fujimatsu, Yasuyuki Miyamoto (Tokyo Inst. of Tech.)

(3) 11:45 - 12:10
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS)

----- Break ( 80 min. ) -----

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Fri, Aug 1 PM (13:30 - 16:40)
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(4) 13:30 - 14:20
[Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.)

(5) 14:20 - 14:45
Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs
Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS)

(6) 14:45 - 15:10
Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT
Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony)

----- Break ( 15 min. ) -----

(7) 15:25 - 15:50
Fabrication of Carbon nanotube TFT for sheet electronic device by printing method.
Hiroyuki Endoh, Noriyuki Tonouchi, Fumiyuki Nihey (NEC Corp.), Tsuyoshi Sekitani, Takao Someya (Univ.of Tokyo)

(8) 15:50 - 16:15
Band offset at Al2O3/β-Ga2O3 Heterojunctions
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)

(9) 16:15 - 16:40
HAXPES Analysis for GaAs Surface State for Electronics Devices
Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Tue, Oct 21, 2014 - Wed, Oct 22, 2014 (tentative): Hokkaido Univ. (Faculty House Trillium) [Fri, Aug 15], Topics: Electron Tube, Vacuum Nanoelectronics, and Their Characterization Techniques
Thu, Nov 27, 2014 - Fri, Nov 28, 2014: [Mon, Sep 15]

# SECRETARY:
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E-mail：