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| Chair |
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Kiyomichi Araki |
| Vice Chair |
|
Osamu Hashimoto |
| Secretary |
|
Ichihiko Toyoda, Ken-ichi Maruhashi |
| Assistant |
|
Tadashi Kawai, Koji Wada |
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|
|
| Chair |
|
Takao Waho |
| Vice Chair |
|
Masaaki Kuzuhara |
| Secretary |
|
Tsuyoshi Tanaka, Manabu Arai |
| Assistant |
|
Shin-ichiro Takatani |
|
| Conference Date |
Wed, Jan 18, 2006 13:30 - 16:35
Thu, Jan 19, 2006 10:20 - 16:00
Fri, Jan 20, 2006 09:00 - 18:10 |
| Topics |
Compound Semiconductor IC and High-Speed, High-Frequency Devices |
| Conference Place |
|
Wed, Jan 18 PM
13:30 - 16:35 |
| (1) |
13:30-13:55 |
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology |
Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio) |
| (2) |
13:55-14:20 |
Over 40-Gbit/s Digital Circuits Using InP HEMT Technology |
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi, Naoki Hara, Tatsuya Hirose (Fujitsu Labs.) |
| (3) |
14:20-14:45 |
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs |
Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.) |
| (4) |
14:45-15:10 |
120-GHz Band 10-Gbit/s Millimeter-wave MMIC Waveguide Modules for Wireless Access System |
Toshihiko Kosugi (NTT Photonics Lab.), Akihiko Hirata (NTT Microsystem Integration Lab.), Masami Tokumitsu, Hirohiko Sugahara (NTT Photonics Lab.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
| (5) |
15:20-15:45 |
Increase of colllector current in hot eletron transistors controlled by gate bias |
Issei Kashima, Akira Suwa (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech JST-CREST) |
| (6) |
15:45-16:10 |
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias |
Nobuya Machida, Mitsuhiko Igarashi, Tomohiro Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech.) |
| (7) |
16:10-16:35 |
Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors(HBT’s) |
Airi Kurokawa, Zhi Jin, Hiroshi Ono, Kazuo Uchida, Shinji Nozaki, Hiroshi Morisaki (UEC) |
Thu, Jan 19 AM
10:20 - 16:00 |
| (8) |
10:20-10:45 |
Analysis of Slow Current Transients and Current Collapse in GaN FETs |
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.) |
| (9) |
10:45-11:10 |
Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs |
Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ) |
| (10) |
11:10-11:35 |
C-V characterization of GaN-based MIS structures at high temperatures |
Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) |
| (11) |
11:35-12:00 |
Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy |
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.) |
| |
12:00-13:20 |
Lunch Break ( 80 min. ) |
| (12) |
13:20-13:45 |
AlGaN/GaN HFETs with a low-temperature GaN cap layer |
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
| (13) |
13:45-14:10 |
AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si |
Juro Mita, Katsuaki Kaifu, Masanori Itoh, Yoshiaki Sano (Oki), Hiroyasu Ishikawa, Takashi Egawa (Nitech) |
| (14) |
14:10-14:35 |
Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane |
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
| |
14:35-14:45 |
Break ( 10 min. ) |
| (15) |
14:45-15:10 |
0.15-mm-dual-gate AlGaN/GaN HEMT mixers |
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) |
| (16) |
15:10-15:35 |
Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications |
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.) |
| (17) |
15:35-16:00 |
High Power AlGaN/GaN MIS-HEMT |
Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.) |
Fri, Jan 20 AM
09:00 - 18:10 |
| (18) |
09:00-09:25 |
-
-- - -- |
Koji Wada, Shin Matsumoto, Takashi Iwasaki (UEC) |
| (19) |
09:25-09:50 |
-
-- - -- |
Kosei Tanii (UEC), Futoshi Nishimura, Kouji Sasabe, Yoshiaki Ueno (Matsushita Electric Works), Koji Wada, Takashi Iwasaki (UEC) |
| (20) |
09:50-10:15 |
A Novel Bandpass Filter with Sharp Attenuations and Wide Stopbands Developed Through the Combined Use of Composite Resonators and Stepped Impedance Resonators |
Hitoshi Miki, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.) |
| (21) |
10:15-10:40 |
A Novel Dual-Band Bandpass Filter Using Composite Resonators |
Zhewang Ma, Taichi Shimizu, Hitoshi Miki, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.) |
| |
10:40-10:50 |
Break ( 10 min. ) |
| (22) |
10:50-11:15 |
Left-handed line constructed by using grounded coplanar strip |
Rei Goto, Hiroyuki Deguchi, Mikio Tsuji, Hiroshi Shigesawa (Doshisha Univ.) |
| (23) |
11:15-11:40 |
90 Degree Hybrid with Insensitivity to Misalignment and Thickness Variation of Multi-layered LTCC Substrate |
Takeshi Yuasa, Yukihiro Tahara, Hideyuki Oh-hashi (Mitsubishi Electric Co.) |
| (24) |
11:40-12:05 |
A Frequency-Tunable Amplifier with a T-Shaped Tunable Adimittance-Inverter |
Hiromitsu Uchida, Kentaro Ogura, Naofumi Yoneda, Yoshihiko Konishi, Shigeru Makino (Mitsubishi Electric Corp.) |
| |
12:05-13:35 |
Lunch Break ( 90 min. ) |
| (25) |
13:35-14:00 |
Highly Linear VCO with Voltage Converter |
Hiroyuki Mizutani, Masaomi Tsuru, Takayuki Matsuzuka, Kenichiro Choumei, Kenji Kawakami, Moriyasu Miyazaki (Mitsubishi Electric) |
| (26) |
14:00-14:25 |
- |
Futoshi Kuroki, Shohei Ishikawa (KNCT), Tsukasa Yoneyama (Tohoku Inst. of Tech.) |
| (27) |
14:25-14:50 |
- |
Futoshi Kuroki, Yusuke Murata, Ryo-ta Masumoto (KNCT), Tsukasa Yoneyama (Tohoku Inst. of Tech.) |
| (28) |
14:50-15:15 |
- |
Futoshi Kuroki, Hiroshi Ohta (KNCT), -, - (Sharp) |
| |
15:15-15:25 |
Break ( 10 min. ) |
| (29) |
15:25-15:50 |
Study on EM Environment at ETC Tollgate with Multiple Lane |
Hirotomo Ichinose, Satoshi Ozaki, Osamu Hashimoto (Aoyama Gakuin Univ.), (Central Nippon Expressway) |
| (30) |
15:50-16:15 |
Examinations of the propagation characteristics on a rectangle wave using FDTD, CIP and R-CIP methods |
Youichi Kakuta, Shinya Watanabe, Osamu Hashimoto (AGU) |
| (31) |
16:15-16:40 |
Analytical and experimental examinations of temeprature distribution of λ/4 type wave absorber using resistive film under high power injection |
Shinya Watanabe, Kota Saito, Akitoshi Taniguti, Osamu Hashimoto (AGU), Toshifumi Saito (TDK) |
| |
16:40-16:50 |
Break ( 10 min. ) |
| (32) |
16:50-18:10 |
[Special Talk]
A Report on the 35th European Microwave Conference |
Tetsuo Anada (Kanagawa University), Hiroshi Kubo (Yamaguchi University), Futoshi Kuroki (Kure National College of Technology), Hiroyuki Deguchi (Doshisha University), Hiromitsu Uchida, Tamotsu Nishino, Koji Yamanaka (Mitsubishi), (Eudyna), Munenari Kawashima (NTT) |
| Announcement for Speakers |
| General Talk (25分) | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| MW |
Technical Committee on Microwaves (MW) [Latest Schedule]
|
| Contact Address |
Koji Wada(UEC)
TEL:0424-43-5212,FAX:0424-43-5212
E- :   ee  c |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E-:    erl ci
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-:   injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr |
Last modified: 2006-01-13 05:35:15
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