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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tanemasa Asano Vice Chair: Toshihiro Sugii Secretary: Morifumi Ohno, Mariko Takayanagi Assistant: Yuichi Matsui DATE: Wed, Jun 21, 2006 13:00 - 17:40 Thu, Jun 22, 2006 09:00 - 15:55 PLACE: Faculty Club, Hiroshima Univ.(Kamimiyama 2-2, Higashi-Hiroshima, Japan. It takes 15min from Saijo JR station by bus. Please get off at a bus stop of Hirodai-chuohguchi.http://www.hiroshima-u.ac.jp/add_html/access/en/saijyo2.html. Prof. Seiichi Miyazaki. 082-424-7656) TOPICS: Science and Technologies of Dielectric Thin Films for Future Electron Devices ---------------------------------------- Wed, Jun 21 PM (13:00 - 17:40) ---------------------------------------- (1) 13:00 - 13:25 Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.) (2) 13:25 - 13:50 Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) (3) 13:50 - 14:15 Characterization of Interfacial Reactions in Al2O3/SiNx/poly-Si Stack Structure by Photoemission Measurements Hiroaki Furukawa, Masahiro Taira, Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.), Kenji Komeda, Mitsuhiro Horikawa, Kuniaki Koyama, Hideharu Miyake (Elpida Memory) ----- Break ( 15 min. ) ----- (4) 14:30 - 14:55 Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) (5) 14:55 - 15:20 Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.) (6) 15:20 - 15:45 Work-function engineering of poly-Si gate by Fermi level pinning and its impact on low power CMOSFET Yasuhiro Shimamoto (Hitachi), Jiro Yugami, Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Masahiro Yoneda (Renesas) ----- Break ( 15 min. ) ----- (7) 16:00 - 16:25 Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS) (8) 16:25 - 16:50 Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2 Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) (9) 16:50 - 17:15 Surface Microroughness of Silicon -- Mechanism and Its Reduction -- Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi (Tohoku Univ.) (10) 17:15 - 17:40 Reduction of ferritin core embedded in Si thin film by thermal annealing Takashi Matsumura, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Shigeo Yoshii, Ichiro Yamashita (Panasonic) ----- Break ( 20 min. ) ----- ----- Get-together ( 90 min. ) ----- ---------------------------------------- Thu, Jun 22 AM (09:00 - 15:55) ---------------------------------------- (11) 09:00 - 09:25 Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation -- From Real-time XPS Measurements -- Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT) (12) 09:25 - 09:50 Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface Susumu Hiyama, Junli Wang, Takayoshi Kato, Tomoyuki Hirano, Kaori Tai, Hayato Iwamoto (Sony) (13) 09:50 - 10:15 The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ----- Break ( 15 min. ) ----- (14) 10:30 - 10:55 Analysis of nitrogen depth profile in SiO2/SiN stacks studied by angle-resolved photoemission spectroscopy Satoshi Toyoda, Jun Okabayashi, Masaharu Oshima (Tokyo Univ.), Guo-Lin Liu, Ziyuan Liu, Kazuto Ikeda, Koji Usuda (STARC) (15) 10:55 - 11:20 Realization of SiON films with small ΔVfb Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Shoko Kikuchi, Kiwamu Sakuma, Yuichiro Mitani (toshiba R&D center), Mariko Takayanagi, Kazuhiro Eguchi (Semiconductor Company) (16) 11:20 - 11:45 Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON Yuichiro Mitani, Hideki Satake (Toshiba Corp.) ----- Lunch Break ( 60 min. ) ----- (17) 12:45 - 13:10 HfON Thin Film Formations by ECR Plasma Oxidation of HfN Shun-ichiro Ohmi, Tomoki Kurose, Masaki Satoh (Tokyo Tech) (18) 13:10 - 13:35 Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) (19) 13:35 - 14:00 The effect on thermal stability by nitrogen atoms in HfO2-based gate dielectrics Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (FUJITSU LABORATORIES LTD.) ----- Break ( 15 min. ) ----- (20) 14:15 - 14:40 unknown Wataru Mizubayashi (MIRAI-ASRC, AIST), Arito Ogawa, Toshihide Nabatame, Hideki Satake (MIRAI-ASET), Akira Toriumi (MIRAI-ASRC, AIST, Univ. of Tokyo) (21) 14:40 - 15:05 Electric characteristics of HfSiON gate dielectric film(tentative) Ryu Hasunuma, Tatsuya Naito (Univ. of Tsukuba), Seiji Inumiya (Selete), Kikuo Yamabe (Univ. of Tsukuba) (22) 15:05 - 15:30 XPS studies on barrier height at Au/ultra-thin SiO2 interface Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS) (23) 15:30 - 15:55 Work Functions at Impurity Pileup Ni-FUSI/SiO(N) Interface and FUGE(Fully Germanided) gates Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Masato Koyama, Junji Koga, Akira Nishiyama (Toshiba Co,) # CONFERENCE SPONSORS: - This is a joint meeting with Silicon Technology Devision, the Japan Society of Applied Physics. # CONFERENCE ANNOUNCEMENT: - Please atten a get-together after the last session of the first day of this meeing. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Aug 17, 2006 - Fri, Aug 18, 2006: Hokkaido University [Mon, Jun 19] Mon, Sep 25, 2006 - Tue, Sep 26, 2006: Kikai-Shinko-Kaikan Bldg. [Fri, Jul 14], Topics: Process, Device, Circuit Simulation, etc. # SECRETARY: Morifumi Ohno (OKI Electric) E-mail:oh  565 o  TEL：0426-62-6104, FAX：0426-67-8367 Last modified: 2006-04-21 19:36:19 |
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