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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)
Assistant: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)

DATE:
Thu, Aug 8, 2013 14:00 - 17:35
Fri, Aug 9, 2013 09:00 - 11:45

PLACE:
Faculty of Engineering, University of Toyama(3190 Gofuku, Toyama-shi, Toyama 930-8555, Japan. http://www.u-toyama.ac.jp/en/access/index.html. Prof. Kouichi Maezawa. +81-76-445-6725)

TOPICS:

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Thu, Aug 8 PM (14:00 - 17:35)
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(1) 14:00 - 14:25
Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance
Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

(2) 14:25 - 14:50
Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps
Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

(3) 14:50 - 15:15
Dynamics of edge oscillation in a transmission line loaded with regularly spaced tunnel diodes
Koichi Narahara (Yamagata Univ.)

----- Break ( 15 min. ) -----

(4) 15:30 - 16:20
[Invited Talk]
Analysis of GaN-based metal-insulator-semiconductor devices by capacitance-frequency-temperature mapping
Toshi-kazu Suzuki, Hong-An Shih, Masahiro Kudo (JAIST)

(5) 16:20 - 16:45
Application of sputtering-deposited BN films to AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Yuji Yamamoto, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST)

(6) 16:45 - 17:10
On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals
Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara (Univ of Fukui)

(7) 17:10 - 17:35
Characterization of Al2O3/ n-Ga2O3 MOS diodes
Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki (Tamura Corp.), Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)

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Fri, Aug 9 AM (09:00 - 11:45)
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(8) 09:00 - 09:25
MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors
Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

(9) 09:25 - 09:50
Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST)

(10) 09:50 - 10:15
Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions
Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science)

----- Break ( 15 min. ) -----

(11) 10:30 - 10:55
Sub-band transport and quantum Hall effect in InGaAs two-dimensional electron gas bilayer system
Shiro Hidaka, Hiuma Iwase, Masashi Akabori, Syoji Yamada (JAIST), Yasutaka Imanaka, Tadashi Takamasu (NIMS)

(12) 10:55 - 11:20
Fabrication and electrical characterization of in-plane-oriented InAs nanowires by selective area molecular beam epitaxy on GaAs
Masashi Akabori, Tatsuya Murakami, Syoji Yamada (JAIST)

(13) 11:20 - 11:45
Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction
Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE ANNOUNCEMENT:
- Please join us for an opening reception after the last session on Aug.8.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Tue, Oct 22, 2013 - Wed, Oct 23, 2013: Enreisou, Hokkaido Univ. [Tue, Aug 13], Topics: Vacuum tube and vacuum nanoelectronics
Thu, Nov 28, 2013 - Fri, Nov 29, 2013: [Wed, Sep 18], Topics: Ｎｉｔｒide and Compound Semiconductor Devices

# SECRETARY:
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E-mail：