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| Chair |
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Takahiro Shinada (Tohoku Univ.) |
| Vice Chair |
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Hiroshige Hirano (TowerJazz Panasonic) |
| Secretary |
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Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) |
| Assistant |
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Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) |
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| Conference Date |
Fri, Jun 21, 2019 11:00 - 17:05 |
| Topics |
Material Science and Process Technology for MOS Devices and Memories |
| Conference Place |
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| Transportation Guide |
www.vbl.nagoya-u.ac.jp/access.html |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Fri, Jun 21 AM
11:00 - 17:05 |
| (1) |
11:00-11:20 |
Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures  SDM2019-25 |
Takuji Hosoi, Kidist Moges (Osaka Univ.), Mitsuru Sometani (AIST), Takayoshi Shimura (Osaka Univ.), Shinsuke Harada (AIST), Heiji Watanabe (Osaka Univ.) |
| (2) |
11:20-11:40 |
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation SDM2019-26 |
Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) |
| (3) |
11:40-12:00 |
Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing SDM2019-27 |
Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| (4) |
12:00-12:20 |
Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film SDM2019-28 |
Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.) |
| |
12:20-13:30 |
Lunch Break ( 70 min. ) |
| (5) |
13:30-14:00 |
[Invited Lecture]
Necessity of 2D/3D nano metrology from the point of semiconductor devices SDM2019-29 |
Koji Usuda (Toshiba Memory Co.) |
| (6) |
14:00-14:30 |
[Invited Lecture]
Nano-scale elasticity evaluation by ultrasonic atomic force microscopy |
Toshihiro Tsuji (Tohoku Univ.), Kazushi Yamanaka (Ball Wave) |
| (7) |
14:30-15:00 |
[Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method SDM2019-30 |
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) |
| (8) |
15:00-15:30 |
[Invited Lecture]
Three-Dimensional Structural Observation for Nanoscale Devices and Crystal defects SDM2019-31 |
Kazuhiko Omote, Yoshiyasu Ito (Rigaku) |
| |
15:30-15:45 |
Break ( 15 min. ) |
| (9) |
15:45-16:05 |
New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching SDM2019-32 |
Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST) |
| (10) |
16:05-16:25 |
First principle simulation about phase change of superlattice GeTe/Sb2Te3 SDM2019-33 |
Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) |
| (11) |
16:25-16:45 |
Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators SDM2019-34 |
Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
| (12) |
16:45-17:05 |
Chemical Structure and Electronic States of HfSiOx/GaN(0001) SDM2019-35 |
Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Invited Lecture | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Tetsu Morooka(Toshiba Memory Corp.)
Tel 059-390-7451 Fax 059-361-2739
E- :          ba |
Last modified: 2019-04-19 21:22:29
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