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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Technical Committee on Electron Device (ED) [schedule] [select]
Chair Koichi Maezawa (Univ. of Toyama)
Vice Chair Kunio Tsuda (Toshiba)
Secretary Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

Conference Date Thu, Mar 3, 2016 14:00 - 17:10
Fri, Mar 4, 2016 10:00 - 11:40
Topics Functional Nanodevices and Related Technologies 
Conference Place Centennial Hall, Hokkaido University 
Address in Hokkaido Univ. Campus, North 9, West 6, Sapporo 060-0809, Japan
Transportation Guide 7 min walk from JR Sapporo Station
http://www.oia.hokudai.ac.jp/about/facilities/event-and-seminar-spaces/centennial-hall/
Contact
Person
Prof. Seiya Kasai
+81-11-706-7171
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Announcement Please join the reception held after the session in the first day. Participation fee is approximately 5000 JPN.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Mar 3 PM 
14:00 - 17:10
(1) 14:00-14:50 [Invited Talk]
A Recent Development in Thin-Film Device Applications using Oxide Semiconductors ED2015-121 SDM2015-128
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.)
(2) 14:50-15:15 Evaluation of wearable thermoelectric power generators by Sb-/Ag- doped ZnO nanocomposites and their properties ED2015-122 SDM2015-129 Veluswamy Pandiyarasan, Jayaram Archana, Mani Navaneethan (Shizuoka Univ.), Salleh Faiz (Univ. Malaya), Yasuhiro Hayakawa, Hiroya Ikeda (Shizuoka Univ.)
(3) 15:15-15:40 Formation of fluorine-doped tin oxide nanostructures by using spray pyrolysis deposition technique ED2015-123 SDM2015-130 Kenji Murakami, Ajith Bandara, Masayuki Okuya, Masaru Shimomura (Shizuoka Univ.), R.m.g. Rajapakse (Univ. Peradeniya)
  15:40-15:55 Break ( 15 min. )
(4) 15:55-16:20 Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector ED2015-124 SDM2015-131 Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa (Shizuoka Univ.)
(5) 16:20-16:45 Low-temperature charge pumping for SiO2/Si interface states ED2015-125 SDM2015-132 Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama)
(6) 16:45-17:10 Nonlinear voltage transfer characteristics of a graphene three-branch nano-junction device and its control ED2015-126 SDM2015-133 Xiang Yin (Hokkaido Univ.), Polin Liu, Hirofumi Tanaka (Kyushu Inst. of Tech.), Toshihiko Maemoto (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.)
Fri, Mar 4 AM 
10:00 - 11:40
(7) 10:00-10:25 Large scale characterization of carbon nanotube thin-film transistors on plastic film Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.)
(8) 10:25-10:50 Study of unique information-processing on pulse signal generating and propagating medium ED2015-127 SDM2015-134 Fumio Maehara, Takahide Oya (Yokohama National Univ.)
(9) 10:50-11:15 Analog-to-digital converter using amoeba-inspired neural network ED2015-128 SDM2015-135 Uichi Ishida, Takao Waho (Sophia Univ.)
(10) 11:15-11:40 Delta Sigma Modulation Microphone Sensors Using a HEMT and a Cavity Resonator ED2015-129 SDM2015-136 Takahiro Yamaoka, Shunya Fujino, Ryo Yamagishi, Masaki Yamakawa, Tomoki Shimada, Masayuki Mori, Koichi Maezawa (Univ. Toyama)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 45 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E-: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- : sijaist 


Last modified: 2015-12-23 14:34:05


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