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=============================================== Technical Committee on Electron Device (ED) Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba) Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas) Secretary: Rihito Kuroda (Tohoku Univ.) Assistant: Tadashi Yamaguchi (Renesas) DATE: Thu, Mar 3, 2016 14:00 - 17:10 Fri, Mar 4, 2016 10:00 - 11:40 PLACE: Centennial Hall, Hokkaido University(in Hokkaido Univ. Campus, North 9, West 6, Sapporo 060-0809, Japan. 7 min walk from JR Sapporo Station. http://www.oia.hokudai.ac.jp/about/facilities/event-and-seminar-spaces/centennial-hall/. Prof. Seiya Kasai. +81-11-706-7171) TOPICS: Functional Nanodevices and Related Technologies ---------------------------------------- Thu, Mar 3 PM (14:00 - 17:10) ---------------------------------------- (1) 14:00 - 14:50 [Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) (2) 14:50 - 15:15 Evaluation of wearable thermoelectric power generators by Sb-/Ag- doped ZnO nanocomposites and their properties Veluswamy Pandiyarasan, Jayaram Archana, Mani Navaneethan (Shizuoka Univ.), Salleh Faiz (Univ. Malaya), Yasuhiro Hayakawa, Hiroya Ikeda (Shizuoka Univ.) (3) 15:15 - 15:40 Formation of fluorine-doped tin oxide nanostructures by using spray pyrolysis deposition technique Kenji Murakami, Ajith Bandara, Masayuki Okuya, Masaru Shimomura (Shizuoka Univ.), R.m.g. Rajapakse (Univ. Peradeniya) ----- Break ( 15 min. ) ----- (4) 15:55 - 16:20 Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa (Shizuoka Univ.) (5) 16:20 - 16:45 Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) (6) 16:45 - 17:10 Nonlinear voltage transfer characteristics of a graphene three-branch nano-junction device and its control Xiang Yin (Hokkaido Univ.), Polin Liu, Hirofumi Tanaka (Kyushu Inst. of Tech.), Toshihiko Maemoto (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.) ---------------------------------------- Fri, Mar 4 AM (10:00 - 11:40) ---------------------------------------- (7) 10:00 - 10:25 Large scale characterization of carbon nanotube thin-film transistors on plastic film Jun Hirotani, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) (8) 10:25 - 10:50 Study of unique information-processing on pulse signal generating and propagating medium Fumio Maehara, Takahide Oya (Yokohama National Univ.) (9) 10:50 - 11:15 Analog-to-digital converter using amoeba-inspired neural network Uichi Ishida, Takao Waho (Sophia Univ.) (10) 11:15 - 11:40 Delta Sigma Modulation Microphone Sensors Using a HEMT and a Cavity Resonator Takahiro Yamaoka, Shunya Fujino, Ryo Yamagishi, Masaki Yamakawa, Tomoki Shimada, Masayuki Mori, Koichi Maezawa (Univ. Toyama) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 45 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. # CONFERENCE ANNOUNCEMENT: - Please join the reception held after the session in the first day. Participation fee is approximately 5000 JPN. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Apr 21, 2016 - Fri, Apr 22, 2016: Thu, May 19, 2016 - Fri, May 20, 2016: Shizuoka University, Hamamatsu campus (Joint Research Lab.) [Fri, Mar 18], Topics: crystal growth、devices characterization , etc. # SECRETARY: Koji Matsunaga（NEC) TEL：+81-44-435-8348 FAX：+81-44-455-8253 E-mail： k-      fp   c Toshikazu Suzuki (JAIST) TEL : +81-761-51-1441 Fax : +81-761-51-1455 E-mail :  si  jaist === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Apr 8, 2016 - Sat, Apr 9, 2016: Okinawa Prefectural Museum & Art Museum [Fri, Feb 12], Topics: Thin film devices, etc Thu, May 19, 2016 - Fri, May 20, 2016: Shizuoka University, Hamamatsu campus (Joint Research Lab.) [Fri, Mar 18], Topics: crystal growth、devices characterization , etc. Wed, Jun 29, 2016: Campus Innovation Center Tokyo [Mon, Apr 11], Topics: Material Science and Process Technology for MOS Devices and Memories # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:      e3 Last modified: 2015-12-23 14:34:05 |
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