| IEICE Technical Committee Submission System Advance Program |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top | Go Back | Prev SDM Conf / Next SDM Conf | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
|
=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Hiroshige Hirano (TowerPartners Semiconductor) Vice Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Secretary: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) Assistant: Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) DATE: Thu, Oct 22, 2020 10:00 - 16:20 PLACE: Online TOPICS: Process Science and New Process Technology ---------------------------------------- Thu, Oct 22 AM (10:00 - 16:20) ---------------------------------------- (1) 10:00 - 10:50 [Memorial Lecture] Atomic layer controlled etching process using plasma Sho Kumakura (Tokyo Electron Miyagi) (2) 10:50 - 11:20 High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) ----- Lunch Break ( 100 min. ) ----- (3) 13:00 - 13:30 Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) (4) 13:30 - 14:00 A two-step wet etching process for the integration of PdEr/HfO2 gate stack structure on the gate-first Schottky barrier MOSFET Rengie Mark D. Mailig, Yuichiro Aruga, Shun-ichiro Ohmi (Tokyo Tech) (5) 14:00 - 14:30 Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet. Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa (Hiroshima Univ.), Shohei Hayashi (Toray Res. Cent.), Seiichiro Higashi (Hiroshima Univ.) ----- Break ( 20 min. ) ----- (6) 14:50 - 15:20 Modification of states of copper and copper oxide due to IPA treatment Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) (7) 15:20 - 15:50 Lattice Matching and X-ray Structural Analysis of Ferroelectric Thin Film BiFeO3 Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College) (8) 15:50 - 16:20 Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Memorial Lecture will have 40 minutes for presentation and 10 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Nov 19, 2020 - Fri, Nov 20, 2020: Online [Mon, Sep 21], Topics: Process, Device, Circuit simulation, etc. Wed, Dec 2, 2020: Online [Wed, Sep 23] Thu, Jan 28, 2021: Online [unfixed] # SECRETARY: SDM Secretary: MORI Takahiro(National Institute of AIST) Tel +81-29-849-1149   -    aist Last modified: 2020-11-06 16:09:28 |
Notification: Mail addresses are partially hidden against SPAM.
[Download Paper's Information (in Japanese)] <-- Press download button after click here.
[Cover and Index of IEICE Technical Report by Issue]
[Presentation and Participation FAQ] (in Japanese)
[Return to SDM Schedule Page] /
| Go Top | Go Back | Prev SDM Conf / Next SDM Conf | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
[Return to Top Page]