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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

DATE:
Thu, Oct 25, 2012 15:20 - 17:00
Fri, Oct 26, 2012 09:30 - 14:15

PLACE:
FFF, Niche, Tohoku University(FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579. http://www.fff.niche.tohoku.ac.jp/index.html. Tetsuya Goto, Tohoku University)

TOPICS:
Process science and new process technologies

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Thu, Oct 25 PM (15:20 - 17:00)
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(1) 15:20 - 15:45
Chemical structures of compositional transition layer at SiO2/Si(100) interface
Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.)

(2) 15:45 - 16:10
AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces
Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.)

(3) 16:10 - 16:35
Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction
Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe)

(4) 16:35 - 17:00
Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching
Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)

----- Break ( 30 min. ) -----

----- Banquet ( 120 min. ) -----

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Fri, Oct 26 AM (09:30 - 14:15)
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(5) 09:30 - 09:55
Noise Performance of Accumulation MOSFETs
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

(6) 09:55 - 10:20
Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer
Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

(7) 10:20 - 11:50
[Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization
Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.)

----- Lunch Break ( 70 min. ) -----

(8) 13:00 - 13:25
Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator
Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

(9) 13:25 - 13:50
Effect of silicon surface roughness on MOSFET performance with ultra-thin HfON gate insulator formed by ECR sputtering
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

(10) 13:50 - 14:15
Ultra high speed wet etching technology for a silicon wafer process
Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Special Talk will have 80 minutes for presentation and 10 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Nov 15, 2012 - Fri, Nov 16, 2012: Kikai-Shinko-Kaikan Bldg [Fri, Sep 7]
Fri, Dec 7, 2012: Kyoto Univ. (Katsura) [Mon, Oct 15], Topics: Fabrication and Characterization of Si-related Materials and Devices

# SECRETARY:
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-mail: o