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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara (Fujitsu Semiconductor)
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

Conference Date Thu, Oct 25, 2012 15:20 - 17:00
Fri, Oct 26, 2012 09:30 - 14:15
Topics Process science and new process technologies 
Conference Place FFF, Niche, Tohoku University 
Address FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579
Transportation Guide http://www.fff.niche.tohoku.ac.jp/index.html
Contact
Person
Tetsuya Goto, Tohoku University
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Oct 25 PM 
15:20 - 17:00
(1) 15:20-15:45 Chemical structures of compositional transition layer at SiO2/Si(100) interface SDM2012-89 Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.)
(2) 15:45-16:10 AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces SDM2012-90 Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.)
(3) 16:10-16:35 Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction SDM2012-91 Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe)
(4) 16:35-17:00 Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)
  17:00-17:30 Break ( 30 min. )
  17:30-19:30 Banquet ( 120 min. )
Fri, Oct 26 AM 
09:30 - 14:15
(5) 09:30-09:55 Noise Performance of Accumulation MOSFETs SDM2012-92 Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(6) 09:55-10:20 Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer SDM2012-93 Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(7) 10:20-11:50 [Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization SDM2012-94
Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.)
  11:50-13:00 Lunch Break ( 70 min. )
(8) 13:00-13:25 Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator SDM2012-95 Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(9) 13:25-13:50 Effect of silicon surface roughness on MOSFET performance with ultra-thin HfON gate insulator formed by ECR sputtering SDM2012-96 Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(10) 13:50-14:15 Ultra high speed wet etching technology for a silicon wafer process SDM2012-97 Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Special TalkEach speech will have 80 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-: o 


Last modified: 2012-08-17 13:51:30


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