| IEICE Technical Committee Submission System Advance Program |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top | Go Back | / | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
|
=============================================== Technical Committee on Electron Device (ED) Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama) Secretary: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC) Assistant: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yasushi Takano (Shizuoka Univ.) Vice Chair: Satoru Noge (Numazu National College of Tech.) Secretary: Tomomasa Sato (Kanagawa Univ.), Junichi Kodate (NTT) Assistant: Nobuyuki Iwata (Nihon Univ.), Takashi Sakamoto (NTT) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas) Secretary: Rihito Kuroda (Tohoku Univ.) Assistant: Tadashi Yamaguchi (Renesas) DATE: Thu, May 28, 2015 13:00 - 18:20 Fri, May 29, 2015 08:40 - 12:35 PLACE: VBL 3F seminar-room, Toyohashi University of Technology(1-1, Hibariga-oka, Tempaku-cho, Toyohashi 441-8580, Japan.Toyotetsu bus runs from Toyohashi station to TUT every 10-15 minutes from 7am to 8pm. Take the bus direction to "Gikadai-mae," "Rispa Toyohashi," or "Fukushi-mura" from the bus stop number 2 of the Toyohashi station, east exit.http://www.tut.ac.jp/english/introduction/map.html. Assoc. Prof. Hiroshi Okada. +81-532-44-6979) TOPICS: crystal growth、devices characterization , etc. ---------------------------------------- Thu, May 28 PM (13:00 - 18:20) ---------------------------------------- (1) 13:00 - 13:25 Synthesis of graphenes by chemical vapor deposition using liquid precursor Naoki Kishi, Takaaki Iwata, Kazuki Iwama, Jianfeng Bao, Liu Huito, Tetsuo Soga (NITech) (2) 13:25 - 13:50 Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading Susumu Ichimura, Hideo Uchida, Koichi Wakita (Chubu Univ.), Yasuhiko Hayashi (Okayama Univ.), Masayoshi Umeno (Chubu Univ.) (3) 13:50 - 14:15 Study on self-assembled monolayers by the immersion method on SiC substrate Yuya Suzuki, Yuji Hirose, Shohei Tamaoki, Reina Miyagawa, Takatoshi Kinoshita, Osamu Eryu (NiTech) (4) 14:15 - 14:40 Optical properties of InGaN nanoplates grown by molecular beam epitaxy Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) ----- Break ( 10 min. ) ----- (5) 14:50 - 15:15 Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) (6) 15:15 - 15:40 Control of N composition of GaAsN alloy grown by surface nitridation Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) (7) 15:40 - 16:05 Growth and preliminary MOSFETs of corundum-structured oxide semiconductors Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) (8) 16:05 - 16:30 Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ----- Break ( 10 min. ) ----- (9) 16:40 - 17:05 Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) (10) 17:05 - 17:30 Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) (11) 17:30 - 17:55 Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) (12) 17:55 - 18:20 Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates Takashi Sumida, Kosuke Hashimoto, Shinjiro Fukui, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ---------------------------------------- Fri, May 29 AM (08:40 - 12:35) ---------------------------------------- (13) 08:40 - 09:05 Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels Shin Watanabe, Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida, Toshiaki Hattori, Kazuaki Sawada (TUT) (14) 09:05 - 09:30 Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) (15) 09:30 - 09:55 Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech) (16) 09:55 - 10:20 Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ----- Break ( 10 min. ) ----- (17) 10:30 - 10:55 Effects of annealing on properties of electrochemically deposited CuxZnyS thin films Tong Bayingaerdi, Masaya Ichimura (NITech) (18) 10:55 - 11:20 Influence of stirring on SnS deposition using chemical bath deposition Taishi Suzuki, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.) (19) 11:20 - 11:45 Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition Zhang Chaolong (NIT), Junie Jhon M. Vequizo (TTI), Masaya Ichimura (NIT) (20) 11:45 - 12:10 Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO Takahiro Kajima (Nagoya Inst. of Tech.), Shoichi Kawai (DENSO CORP.), Masaya Ichimura (Nagoya Inst. of Tech.) (21) 12:10 - 12:35 Observation of fluorescence from Legionella pneumophila capturedin a microfluidic chip Yusuke Nishimura, Ryuhei Hayashi, Hirokazu Nakazawa, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii (Toyohashi Univ. of Tech.), Katsuyuki Machida (Tokyo Institute of Tech., NTT-AT), Kazuya Masu (Tokyo Institute of Technology, NTT Advanced Tech.), Changle Wang, Ken-Ichiro Iida, Mitsumasa Saito, Shin-ichi Yoshida (Kyusyu Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is cooperated by VBL, Toyohashi University of Technology === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Fri, Jul 24, 2015 - Sat, Jul 25, 2015: IT Business Plaza Musashi 5F [Fri, Jun 5], Topics: Semiconductor Processes and Devices Mon, Aug 3, 2015 - Tue, Aug 4, 2015: Kikai-Shinko-Kaikan Bldg. , Topics: Sensor device, MEMS, etc # SECRETARY: Seiya Kasai (Hokkaido Univ.) TEL : 011-706-6509 Fax : 011-716-6004 E-mail :   i rciqe    i Koji Matsunaga（NEC) TEL：+81-44-455-8348、FAX：+81-44-455-8253 E-mail： k-     fp  c === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Jun 19, 2015: Kikai-Shinko-Kaikan Bldg. [Thu, Apr 9] Mon, Aug 10, 2015 - Tue, Aug 11, 2015: [Mon, Jun 22] Thu, Aug 27, 2015 - Fri, Aug 28, 2015: Aomori-Bussankan-Asupamu [Mon, Jun 15] === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Jun 19, 2015: VBL, Nagoya Univ. [Thu, Apr 9], Topics: Material Science and Process Technology for MOS Devices and Memories Mon, Aug 24, 2015 - Tue, Aug 25, 2015: Kumamoto City [Wed, Jun 17], Topics: Low voltage/low power techniques, novel devices, circuits, and applications # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:  fff  e Last modified: 2015-03-25 17:45:30 |
Notification: Mail addresses are partially hidden against SPAM.
[Download Paper's Information (in Japanese)] <-- Press download button after click here.
[Cover and Index of IEICE Technical Report by Issue]
[Presentation and Participation FAQ] (in Japanese)
[Return to ED Schedule Page] / [Return to CPM Schedule Page] / [Return to SDM Schedule Page] /
| Go Top | Go Back | / | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
[Return to Top Page]