IEICE Technical Committee Submission System
Advance Program
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top  Go Back   Prev ED Conf / Next ED Conf [HTML] / [HTML(simple)] / [TEXT]  [Japanese] / [English] 

===============================================
Technical Committee on Electron Device (ED)
Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba)
Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

DATE:
Mon, Dec 21, 2015 13:00 - 18:10
Tue, Dec 22, 2015 09:00 - 15:40

PLACE:
Katahira Campus, RIEC, Tohoku University(2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan. On foot: About 20 minutes from JR Sendai Station. http://www.riec.tohoku.ac.jp/en/access/. Prof. Taiichi Otsuji, RIEC, Tohoku University)

TOPICS:
Millimeter-wave, terahertz-wave devices and systems

----------------------------------------
Mon, Dec 21 PM (13:00 - 18:10)
----------------------------------------

----- Opening Remarks ( 5 min. ) -----

(1) 13:05 - 13:45
[Invited Talk]
Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth
Shinsuke Hara (NICT), Kousuke Katayama, Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.)

(2) 13:45 - 14:10
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT)

(3) 14:10 - 14:35
Theoretical Analysis of GaAsSb-based Backward Diodes on the basis of a non-equilibrium quantum transport model
Hisanari Fujita, Kosuke ono, Michihiko Suhara (TMU), Tsuyoshi Takahashi (Fujitsu Lab.)

(4) 14:35 - 15:00
Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.)

(5) 15:00 - 15:25
Extraction of intrinsic parameters in graphene-channel FET
Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.)

----- Break ( 15 min. ) -----

(6) 15:40 - 16:05
Progress of GaN-based Unexplored Wavelength Terahertz Quantum Cascade Lasers
Wataru Terashima, Hideki Hirayama (RIKEN)

(7) 16:05 - 16:30
The improvement of output power characteristics of THz QCLs in 77 K Dewar condenser
Tsung-Tse Lin, Wataru Terashima, Hideki Hirayama (RIKEN)

(8) 16:30 - 16:55
Liquid phase growth of impurity-doped GaSe crystals for the high efficiency THz wave generation by high resistivity
Kouhei Suzuki, Yohei Sato, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.)

(9) 16:55 - 17:20
Upper limit improvement in tunable range of THz-wave parametric source
Kosuke Murate, Kazuki Imayama (Nagoya Univ.), Shinichiro Hayashi (RIKEN/Nagoya Univ.), Kodo Kawase (Nagoya Univ./RIKEN)

(10) 17:20 - 17:45
Nonlinear optical wavelength-conversion for a tunable sub-THz wave generation
Yu Tokizane, Koji Nawata, Zhengli Han, Mio Koyama, Takashi Notake, Yuma Takida, Hiroaki Minamide (RIKEN)

(11) 17:45 - 18:10
Sub-terahertz-wave generation based on nonlinear wavelength conversion
Shin'ichiro Hayashi (RIKEN/Nagoya Univ.), Kouji Nawata, Yuma Takida (RIKEN), Kodo Kawase (Nagoya Univ./RIKEN), Hiroaki Minamide (RIKEN)

----- Welcome Reception ( 90 min. ) -----

----------------------------------------
Tue, Dec 22 AM (09:00 - 12:00)
----------------------------------------

(12) 09:00 - 09:40
[Invited Talk]
The terahertz as a boundary and transition region
-- Some proposals toward practical THz technologies --
Koji Mizuno (Tohoku Univ.)

(13) 09:40 - 10:05
Carrier dynamics in graphene studied by ultra-fast and ultra-broadband optical-pump/terahertz probe spectroscpy
Sho Ikeda (Tohoku Univ.), Masatsugu Yamashita, Chiko Otani (RIKEN)

(14) 10:05 - 10:30
Terahertz Emission and Detection from Double Graphene Layer Heterostructures
Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe (RIEC Tohoku Univ.), Victor Ryzhii (Inst. of Ultra High Freq. Semicond. Elect. Russia), Taiichi Otsuji (RIEC Tohoku Univ.)

----- Break ( 15 min. ) -----

(15) 10:45 - 11:10
Terahertz response of carbon nanotube forest under optical illumination
Takuya Miyajima, Taro Itatsu (Hokkaido Univ.), Hisashi Sugime (Cambridge Univ.), Stevanus Arnold, Taiichi Otsuji (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.)

(16) 11:10 - 11:35
Measurement of Trace Amounts of Liquid using Metamaterial excited by High Density THz Waves
Eiki Matsuda, Kazunori Serita, Kosuke Okada, Hironaru Murakami, Iwao Kawayama, Masayoshi Tonouchi (Osaka Univ.)

(17) 11:35 - 12:00
Evaluation of GaN by using Laser-induced THz emission
Yuji Sakai, Iwao Kawayama (Osaka Univ.), Hidetoshi Nakanishi (SCREEN), Masayoshi Tonouchi (Osaka Univ.)

----- Lunch Break ( 60 min. ) -----

----------------------------------------
Tue, Dec 22 PM (13:00 - 15:40)
----------------------------------------

(18) 13:00 - 13:25
Nondestructive and remote inspection applications by terahertz spectrum imaging
Takashi Kimura, Yusuke Nakasato, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.)

(19) 13:25 - 13:50
Mode analysis of terahertz hollow fiber using time-domain spectroscopy
Kosei Ito, Takashi Katagiri, Yuji Matsuura (Tohoku Univ.)

(20) 13:50 - 14:30
[Invited Talk]
Wireless Transceiver Systems in Millimeter to Terahertz Wave Bands with CMOS Integrated Circuit Technology
Koichi Mizuno, Takayuki Abe, Junji Satou, Koji Takinami, Kazuaki Takahashi (Panasonic)

(21) 14:30 - 15:10
[Invited Talk]
Development of 0.1/0.3 THz-band Power Modules
Norio Masuda, Mitsuru Yoshida, Yusuke Fujishita, Junichi Kobayashi (NEC Network and Sensor), Norihiko Sekine, Atsushi Kanno (NICT)

(22) 15:10 - 15:35
Study on Misalignment of Axis in Terahertz Communications
-- Comparison with Free-Space Optics --
Yuki Inubushi, Kazuki Oogimoto (Osaka Univ.), Shigeru Kuwano, Jun Terada (NTT), Tadao Nagatsuma (Osaka Univ.)

----- Closing Remarks ( 5 min. ) -----

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 35 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This workshop is co-sponsored by IEICE Tech. Group on Terahertz Application Systems.


=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Wed, Jan 20, 2016: Kikai-Shinko-Kaikan Bldg. [Tue, Nov 17], Topics: Power Devices and High-frequency Devices, Microwave, etc.
Thu, Mar 3, 2016 - Fri, Mar 4, 2016: Centennial Hall, Hokkaido Univ. [Fri, Dec 18], Topics: Functional Nanodevices and Related Technologies

# SECRETARY:
Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E-mail: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E-mail : sijaist


Last modified: 2015-10-20 15:05:41


Notification: Mail addresses are partially hidden against SPAM.

[Download Paper's Information (in Japanese)] <-- Press download button after click here.
 
[Cover and Index of IEICE Technical Report by Issue]
 

[Presentation and Participation FAQ] (in Japanese)
 

[Return to ED Schedule Page]   /  
 
 Go Top  Go Back   Prev ED Conf / Next ED Conf [HTML] / [HTML(simple)] / [TEXT]  [Japanese] / [English] 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan