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Technical Committee on Silicon Device and Materials (SDM)
Chair: Takahiro Shinada (Tohoku Univ.) Vice Chair: Hiroshige Hirano (TowerJazz Panasonic)
Secretary: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (KIOXIA)
Assistant: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

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Technical Committee on Organic Molecular Electronics (OME)
Chair: Yutaka Majima (Tokyo Inst. of Tech.) Vice Chair: Toshiki Yamada (NICT)
Secretary: Dai Taguchi (Tokyo Inst. of Tech.), Hirotake Kajii (Osaka Univ.)
Assistant: Toshihiko Kaji (Tokyo Univ. of Agriculture and Tech.), Yoshiyuki Seike (Aichi Inst. of Tech.)

DATE:
Mon, Apr 13, 2020 13:00 - 17:40
Tue, Apr 14, 2020 09:10 - 11:40

PLACE:
Okinawa Seinen Kaikan(2-15-23 Kume, Naha-shi, Okinawa 900-0033, Japan. Taizoh SADOH (Kyushu University))

TOPICS:
Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc.

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Mon, Apr 13 PM (13:00 - 17:40)
----------------------------------------

(1) 13:00 - 13:30
[Invited Talk]
Twin formation mechanism in growth of single crystal Si strip by uCLBS method and influence of precursor Si films
Wenchang Yeh, Toshiki Shirakawa (Shimane Univ.)

(2) 13:30 - 14:00
[Invited Talk]
Low-Temperature Crystallization of Group Four Semiconductor Thin Film and Thin-Film Transistor Utilizing Tunnel Injection
Naoto Matsuo (Univ Hyogo)

(3) 14:00 - 14:20
Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing
Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus)

(4) 14:20 - 14:50
[Invited Talk]
Low temperature crystallization of silicon thin film and its application to thin film transistor
Yukiharu Uraoka (NAIST)

(5) 14:50 - 15:10
Issues for crystallization of SI films
Noguchi Takashi, Okada Tatsuya (Univ. Ryukyus)

----- Break ( 10 min. ) -----

(6) 15:20 - 15:50
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films
Kaoru Toko (Univ. of Tsukuba)

(7) 15:50 - 16:20
[Invited Talk]
Atmospheric Pressure Thermal Plasma Jet Crystallization and Electrical Characteristics of Phosphorus-doped Germanium Films on Insulator
Seiichiro Higashi (Hiroshima Univ.)

(8) 16:20 - 16:50
[Invited Talk]
Improving the characteristics of graphene TFT using graphene/Ni compound semiconductor hetero-junction
Kazunori Ichikawa (NIT Matsue Col)

(9) 16:50 - 17:20
[Invited Talk]
Fabrication of MoS2 and WS2 films by chemical solution process for thin film transistors
Joonam Kim, Takahiro Nakajima, Yuki Kobayashi, Ken-ichi Haga, Eisuke Tokumitsu (JAIST)

(10) 17:20 - 17:40
Effects of a-Si under-layer on solid-phase crystallization of GeSn/insulator
Yuta Tan, Daiki Tsuruta, Taizoh Sadoh (Kyushu univ.)

----------------------------------------
Tue, Apr 14 AM (09:10 - 11:40)
----------------------------------------

(11) 09:10 - 09:30
In situ observation of molecules adsorbed on solid/liquid interfaces
Naoki Matsuda, Hirotaka Okabe (AIST)

(12) 09:30 - 09:50
EFISHG measurement system for study of triboelectric generation and visualizing electronic charge due to triboelectrification and peeling-electrification
Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech)

(13) 09:50 - 10:10
Analysis of polarization mechanism of chiral perovskites using nonlinear optical measurement
Taishi Noma (RIKEN)

(14) 10:10 - 10:40
[Invited Talk]
TFT LCD displays and it related glass substratge attributes
Taketsugu Itoh (IDC)

(15) 10:40 - 11:10
[Invited Talk]
Oxide vs. poly-Si TFTs
Mamoru Furuta (KUT)

(16) 11:10 - 11:40
[Invited Talk]
Development of oxide thin-film transistors for large-sized flexible displays
Hiroshi Tsuji, Mitsuru Nakata, Tatsuya Takei, Masashi Miyakawa, Yoshiki Nakajima, Takahisa Shimizu (NHK)

# Information for speakers
General Talk (20) will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk (35) will have 25 minutes for presentation and 10 minutes for discussion.

- This workshop has been cancelled. The technical report will not be issued.


=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, May 29, 2020: Nagoya Institute of Technology [Fri, Mar 13]
Wed, Jul 1, 2020: Nagoya Univ. VBL3F , Topics: Material Science and Process Technology for MOS Devices and Memories

# SECRETARY:
Tetsu Morooka(KIOXIA Corp.)
Tel 059-390-7451 Fax 059-361-2739
E-mail: oxia

=== Technical Committee on Organic Molecular Electronics (OME) ===


Last modified: 2020-03-02 13:41:18


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