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09:30-09:40 |
Opening Address ( 10 min. ) |
Wed, Jun 30 AM -Plenary Session 1- 09:40 - 10:30 |
(1) |
09:40-10:20 |
[Keynote Address]
Challenge for electromechanical logic systems using compound semiconductor heterostructures |
Hiroshi Yamaguchi, Imran Mahboob, Hajime Okamoto, Koji Onomitsu (NTT) |
|
10:20-10:30 |
Break ( 10 min. ) |
Wed, Jun 30 AM -Session 1A : Emerging Device Technology 1- 10:30 - 14:25 |
(1) |
10:30-10:55 |
[Invited Talk]
Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics |
Woo Young Choi (Sogang Univ.) |
(2) |
10:55-11:20 |
[Invited Talk]
Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer |
Young Su Kim, Min Ho Kang (National Nanofab Center), Kang Suk Jeong (Chungnam National Univ.), Jae Sub Oh, Dong Eun Yoo (National Nanofab Center), Hi Deok Lee, Ga-Won Lee (Chungnam National Univ.) |
(3) |
11:20-11:45 |
[Invited Talk]
Piezoelectric material based passive RFID tags |
Hyunchul Bae, Jaekwon Kim, Jinwook Burm (Sogang Univ.) |
|
11:45-12:00 |
Break ( 15 min. ) |
(4) |
12:00-12:25 |
[Invited Talk]
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors |
Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST) |
(5) |
12:25-12:50 |
[Invited Talk]
Toward high-efficiency thin-film solar cells using semiconducting BaSi2 |
Takashi Suemasu, Mitsutaka Saito, Atsushi Okada, Katsuaki Tou, Ajimal Khan (Univ. of Tsukuba.), Noritaka Usami (Tohoku Univ.) |
(6) |
12:50-13:15 |
[Invited Talk]
Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates |
Makoto Yoshimi (Soitec) |
|
13:15-14:25 |
Lunch Break ( 70 min. ) |
Wed, Jun 30 PM -Session 2A : Memory 1- 14:25 - 15:40 |
(1) |
14:25-14:40 |
A New Cone-Type 1T DRAM Cell |
Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) |
(2) |
14:40-14:55 |
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory |
Jong-Dae Lee, Hyun-Min Seung, Kyoung-Cheol Kwon, Jea-Gun Park (Hanyang Univ.) |
(3) |
14:55-15:10 |
The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure |
Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
(4) |
15:10-15:25 |
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect |
Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) |
|
15:25-15:40 |
Break ( 15 min. ) |
Wed, Jun 30 PM -Session 3A : Emerging Device Technology 2- 15:40 - 17:25 |
(1) |
15:40-15:55 |
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode |
Donghyun Kim, Jaewook Jeong, Yongtaek Hong (Seoul National Univ.) |
(2) |
15:55-16:10 |
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer |
Young uk Song, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
(3) |
16:10-16:25 |
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures |
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) |
(4) |
16:25-16:40 |
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes |
Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) |
(5) |
16:40-16:55 |
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors |
Min Jin Lee, Woo Younhg Choi (Sogang Univ.) |
(6) |
16:55-17:10 |
A design of Novel IGBT with Oblique Trench Gate |
Juhyun Oh, Dae Hwan Chun (Koria Univ.), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju, Man Young Sung (Koria Univ.), Yong Tae Kim (KIST) |
(7) |
17:10-17:25 |
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects |
Yong Tae Kim (KIST), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju (Koria Univ.) |
Wed, Jun 30 PM -Session 2B : Graphene and ?-?s- 14:25 - 16:30 |
(1) |
14:25-14:50 |
[Invited Talk]
Synthesis of wafer scale graphene layer for future electronic devices |
Byung Jin Cho, Jeong Hun Mun (KAIST) |
(2) |
14:50-15:15 |
[Invited Talk]
Graphene channel FET: A New Candidate for High-Speed Devices |
Tetsuya Suemitsu (Tohoku Univ.) |
(3) |
15:15-15:30 |
Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors |
J. S. Hwang, H. T. Kim (Korea Univ.), J. H. Lee, D. M. Whang (Korea Univ./Sungkyunkwan Univ.), S. W. Hwang (Korea Univ.) |
(4) |
15:30-15:45 |
Fabrication of InP/InGaAs DHBTs with buried SiO2 wires |
Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
(5) |
15:45-16:00 |
Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs |
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Shoji Yamahata (NTT Photonics Labs.) |
(6) |
16:00-16:15 |
Electrochemical formation of InP porous structures for their application to photoelectric conversion devices |
Hiroyuki Okazaki, Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume (Hokkaido Univ) |
|
16:15-16:30 |
Break ( 15 min. ) |
Wed, Jun 30 PM -Session 3B : High Speed and High Frequency Applications 1- 16:30 - 17:30 |
(1) |
16:30-16:45 |
50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique |
Satoshi Tsunashima, Michihiro Hirata, Koichi Murata (NTT Corp.) |
(2) |
16:45-17:00 |
94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs |
Yong-Hyun Baek, Sang-Jin Lee, Tae-Jong Baek, Seok-Gyu Choi, Min Han, Dong-Sik Ko, Jin-Koo Rhee (Dongguk Univ.) |
(3) |
17:00-17:15 |
A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation |
Bongsub Song (Sogang Univ.), Dohyung Kim (Samsung Electronics), Jinwook Burm (Sogang Univ.) |
(4) |
17:15-17:30 |
RF Interconnect Technology for On-Chip and Off-Chip Communication |
Jongsun Kim (Hongik Univ.), B. Byun, M.Frank Chang (Univ. of California) |
Thu, Jul 1 AM -Plenary Session 2- 09:30 - 10:20 |
(1) |
09:30-10:10 |
[Keynote Address]
Future perspective for the mainstream CMOS technology and their contribution to green technologies |
Hiroshi Iwai (Tokyo Inst. of Tech.) |
|
10:10-10:20 |
Break ( 10 min. ) |
Thu, Jul 1 AM -Session 4A : Channel Engineering- 10:20 - 11:50 |
(1) |
10:20-10:45 |
[Invited Talk]
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility |
Jungwoo Oh, J. Huang, I. Ok, S. H. Lee, P. D. Kirsch, R. Jammy, Hi-Deok Lee (SEMATECH) |
(2) |
10:45-11:10 |
[Invited Talk]
III-V/Ge CMOS technologies and heterogeneous integrations on Si platform |
Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo.) |
(3) |
11:10-11:35 |
[Invited Talk]
Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport |
Masumi Saitoh, Yukio Nakabayashi (Toshiba), Ken Uchida (Tokyo Inst. of Tech.), Toshinori Numata (Toshiba) |
|
11:35-11:50 |
Break ( 15 min. ) |
Thu, Jul 1 AM -Session 5A : Emerging Device Technology 3- 11:50 - 13:05 |
(4) |
11:50-12:15 |
[Invited Talk]
Si single-dopant devices and their characterization |
Michiharu Tabe, Daniel Moraru, Earfan Hamid, Miftahul Anwar, Arief Udhiarto, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno (Shizuoka Univ.) |
(5) |
12:15-12:40 |
[Invited Talk]
Investigation on fabrication of nanoscale patterns using laser interference lithography |
Jinnil Choi, Jung Ho, Ki-Young Dong, Eun-Mi Park, Byeong-Kwon Ju (Korea Univ.) |
(6) |
12:40-13:05 |
[Invited Talk]
Bottom-up synthesis of metal-free elementary semiconductor nanowires |
Dongmok Whang (Sungkyunkwan Univ.), Sung Woo Hwang (Koria Univ.) |
Fri, Jul 2 AM -Session 6A : TFTs and Sensors- 09:30 - 11:15 |
(1) |
09:30-09:45 |
Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO |
Jung Ho Park, Jinnil Choi, Seongpil Chang, Ki-Young Dong, Eun-Mi Park, Byeong-Kwon Ju (Univ. of Korea) |
(2) |
09:45-10:00 |
Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers |
Hyo-seong Seong, Ji-hoon Son, Woo-sung Kim, Hong-seung Kim (Korea Maritime Univ.), Woo-seok Cheong (ETRI), Nak-won Jang (Korea Maritime Univ.) |
(3) |
10:00-10:15 |
Acivation behaviour for doped Si films after laser or furnace annealing |
Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) |
(4) |
10:15-10:30 |
Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients |
Chun-Hyung Cho, Ho-Young Cha (Hongik Univ.) |
(5) |
10:30-10:45 |
Fabrication of gas sensor using pd doped SnO2 nanotubes |
Ki-Young Dong, In-Sung Hwang, Dae-Jin Ham, Jinnil Choi, Jung-Ho Park, Jong-Heun Lee, Byeong-Kwon Ju (Korea Univ.) |
(6) |
10:45-11:00 |
Analysis of Transfer Gate in CMOS Image Sensor |
Seonghyung Park, Hyuk-Min Kwon, Jung-Deuk Bok, In-Shik Han, Woonil Choi, Hi-Deok Lee (Chungnam National Univ) |
|
11:00-11:15 |
Break ( 15 min. ) |
Fri, Jul 2 AM -Session 7A : Gate Oxides- 11:15 - 14:15 |
(1) |
11:15-11:30 |
Interaction of bis-diethylaminosilane with hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory |
Seung-Bin Baek, Dae-Hee Kim (Korea Univ. of Tech. and Edu.), Yong-Chan Jeong (ASM Genitech), Yeong-Cheol Kim (Korea Univ. of Tech. and Edu.) |
(2) |
11:30-11:45 |
Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta2O5 gate stacks |
Hoon-Ki Lee, Jagadeesh Chandra, Kyu-Hwan Shim (Chonbuk National Univ.), Hyung-Joong Yun, Jouhahn Lee (KBSI), Chel-Jong Choi (Chonbuk National Univ.) |
(3) |
11:45-12:00 |
Modulation of PtSi work function by alloying with low work function metal |
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
(4) |
12:00-12:15 |
The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter |
Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) |
(5) |
12:15-12:30 |
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface |
Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(6) |
12:30-12:45 |
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities |
Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
(7) |
12:45-13:00 |
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET |
Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) |
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13:00-14:15 |
Lunch Break ( 75 min. ) |
Fri, Jul 2 PM -Session 8A : Memory 2- 14:15 - 16:50 |
(1) |
14:15-14:40 |
[Invited Talk]
High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications |
Yung-Chun Wu, Min-Feng Hung, Jiang-Hung Chen, Lun-Chun Chen, Ji-Hong Jiang (National Tsing Hua Univ. Taiwan) |
(2) |
14:40-15:05 |
[Invited Talk]
A Single Element Phase Transition Memory |
Sang-Hyeon Lee, Moonkyung Kim (Cornell Univ.), Byung-ki Cheong (KIST), Jooyeon Kim (Ulsan College), Jo-Won Lee (National Program for Tera-level Nano Devices, Korea), Sandip Tiwari (Cornell Univ.) |
(3) |
15:05-15:20 |
Impact of Floating Body type DRAM with the Vertical MOSFET |
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST) |
|
15:20-15:35 |
Break ( 15 min. ) |
(4) |
15:35-15:50 |
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect |
Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) |
(5) |
15:50-16:05 |
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories |
Akira Otake, Keita Yamaguchi, Kenji Shiraishi (Univ. of Tsukuba.) |
(6) |
16:05-16:20 |
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure |
Moon-Sik Seo (Tohoku Univ.), Tetsuo Endoh (Tohoku Univ./JST) |
(7) |
16:20-16:35 |
New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells |
Seung Hyeun Roh, Woo Young Choi (Sogang Univ.) |
|
16:35-16:40 |
Break ( 5 min. ) |
|
16:40-16:50 |
Closing Address ( 10 min. ) |
Fri, Jul 2 AM -Session 6B : Wide Bandgap Materials and Devices, Power Devices- 09:30 - 11:35 |
(1) |
09:30-09:55 |
[Invited Talk]
Development of Low on-resistance SiC Trench MOSFET and other SiC power devices |
Yuki Nakano, Ryota Nakamura, Katsuhisa Nagao, Takashi Nakamura, Hidemi Takasu (ROHM) |
(2) |
09:55-10:10 |
Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors |
Jaegil Lee, Chun-Hyung Cho, Ho-Young Cha (Hongik Univ.) |
(3) |
10:10-10:35 |
[Invited Talk]
InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD |
Makoto Miyoshi, Shigeaki Sumiya, Mikiya Ichimura, Tomohiko Sugiyama, Sota Maehara, Mitsuhiro Tanaka (NGK), Takashi Egawa (Nagoya Inst. of Tech.) |
(4) |
10:35-10:50 |
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric |
Joseph Freedsman, Arata Watanabe, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) |
(5) |
10:50-11:05 |
Characterization of deep electron levels of AlGaN grown by MOVPE |
Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) |
(6) |
11:05-11:20 |
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process |
Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.) |
|
11:20-11:35 |
Break ( 15 min. ) |
Fri, Jul 2 AM -Session 7B : Si IC and Circuit Technology- 11:35 - 14:15 |
(1) |
11:35-11:50 |
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation |
Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.) |
(2) |
11:50-12:05 |
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation |
Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.) |
(3) |
12:05-12:20 |
A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process |
Jae-Young Park, Dae-Woo Kim, Young-San Son, Jong-Chan Ha, Jong-Kyu Song, Chang-Soo Jang, Won-Young Jung (Dongbu HiTek) |
(4) |
12:20-12:35 |
A Precision Floating-Gate Mismatch Measurement Technique for Analog Applications |
Won-Young Jung, Jong Min Kim, Jin-Soo Kim, Taek-Soo Kim (Dongbu HiTek) |
(5) |
12:35-12:50 |
A Physical-Based Modeling for Accurate Wide-Width LDMOS |
Won-Young Jung, Jong-Sub Lee, Eun-Jin Kim, Ki-Jung Park, San-Hun Kwak, Jin-Soo Kim, Taek-Soo Kim (Dongbu HiTek) |
(6) |
12:50-13:05 |
Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells |
Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na (Tohoku Univ.) |
|
13:05-14:15 |
Lunch Break ( 70 min. ) |
Fri, Jul 2 PM -Session 8B : High Speed and High Frequency Applications 2- 14:15 - 15:30 |
(7) |
14:15-14:30 |
A V-band Common-Source Low Noise Amplifier in 0.13 μm RFCMOS Technology |
Sung-Jin Kim, Dong-Hyun Kim, Jae-Sung Rieh (Korea Univ.) |
(8) |
14:30-14:45 |
A 0.18 um CMOS process 10-PAM transceiver for 10 Gigabit Ethernet |
Nayeon Cho, J K Jeong, J J Lee, J Burm (Sogang Univ.) |
(9) |
14:45-15:00 |
A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers |
Ryoto Yaguchi, Fumiyuki Adachi, Takao Waho (Sophia Univ.) |
(10) |
15:00-15:15 |
A Basic Study on RF Characteristics of Short Wavelength Comb-type Transmission Line on MMIC |
Jang-Hyeon Jeong, Young-Bae Park, Bo-Ra Jung, Jeong-Gab Ju, Eui-Hoon Jang, Chi-Hong Min, Seong-Il Hong, Suk-Youb Kang, Hong Seung Kim, Young Yun (Korea Maritime Univ.) |
|
15:15-15:30 |
Break ( 15 min. ) |
Fri, Jul 2 PM -Session 9B : Nano-Scale devices and Physics- 15:30 - 16:40 |
(1) |
15:30-15:45 |
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance |
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(2) |
15:45-16:00 |
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET |
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST) |
(3) |
16:00-16:15 |
Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current |
Joung-eob Lee, Kwon-Chil Kang, Jung Han Lee, Kim Kyung Wan, Byung-Gook Park (Seoul National Univ.) |
(4) |
16:15-16:30 |
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor |
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) |
|
16:30-16:40 |
Break ( 10 min. ) |