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Technical Committee on Silicon Device and Materials (SDM)
Chair: Takahiro Shinada (Tohoku Univ.) Vice Chair: Hiroshige Hirano (TowerJazz Panasonic)
Secretary: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

DATE:
Wed, Oct 17, 2018 14:00 - 17:25
Thu, Oct 18, 2018 09:30 - 15:20

PLACE:
Niche, Tohoku Univ.(http://www.fff.niche.tohoku.ac.jp/index_e.html)

TOPICS:
Process Science and New Process Technology

----------------------------------------
Wed, Oct 17 PM (14:00 - 17:25)
----------------------------------------

(1) 14:00 - 14:50
[Invited Talk]
Fin-FET MONOS for Next Generation Automotive-MCU
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas)

(2) 14:50 - 15:20
New piezoelectric materials by RF sputtering process and applications to sensor
Fuminobu Imaizumi (NIT, Oyama College), kousuke Yanagida

(3) 15:20 - 15:50
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating
Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ)

----- Break ( 15 min. ) -----

(4) 16:05 - 16:35
Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process
Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.)

(5) 16:35 - 17:25
[Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States
Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.)

----------------------------------------
Thu, Oct 18 AM (09:30 - 15:20)
----------------------------------------

(6) 09:30 - 10:20
[Invited Talk]
A lesson from Kumamoto earthquake disaster at Sony Semiconductor Manufacturing Kumamoto Technology Center
Hiromi Suzuki (Kumamoto Univ.), Yasuhiro Ueda (Sony Corp.)

(7) 10:20 - 10:50
Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering
Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.)

(8) 10:50 - 11:20
Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process
Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.)

----- Break ( 100 min. ) -----

(9) 13:00 - 13:30
Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer
Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech)

(10) 13:30 - 14:00
Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy
Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.)

(11) 14:00 - 14:30
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)

(12) 14:30 - 15:20
[Invited Talk]
Promotion of Silicon Island in Kumamoto area and reconstruction from the earthquake disaster
-- How to develop Japanese semiconductor industry with academia collaboration --
Hiroshi Kubota (Kumamoto Univ.)

# Information for speakers
General Talk will have 25 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.


=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Nov 8, 2018 - Fri, Nov 9, 2018: Kikai-Shinko-Kaikan Bldg. [Mon, Sep 3], Topics: Process, Device, Circuit simulation, etc.
Tue, Dec 25, 2018: [unfixed]
Tue, Jan 29, 2019: Kikai-Shinko-Kaikan Bldg. [unfixed]

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: rihito.kuroda.e3@tohoku.ac.jp


Last modified: 2018-08-19 13:26:57


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