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Technical Committee on Electronic Information Displays (EID)
Chair: Tomokazu Shiga (Univ. of Electro-Comm.)
Vice Chair: Mutsumi Kimura (Ryukoku Univ.), Yuko Kominami (Shizuoka Univ.)
Secretary: Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.)
Assistant: Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Takashi Kojiri (ZEON), Ryosuke Nonaka (Toshiba), Takeshi Okuno (Samsung)

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)
Assistant: Tadashi Yamaguchi (Renesas)

DATE:
Mon, Dec 14, 2015 11:00 - 16:30

PLACE:


TOPICS:
Si and Si-related Materials and Devices, and Display Technology

----------------------------------------
Mon, Dec 14 AM (11:00 - 13:15)
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(1) 11:00 - 11:15
Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)

(2) 11:15 - 11:30
Study of Deoxyribonucleic Acid (DNA) for Channel Materials of MOSFET
-- Non-Coulomb Blockade/Staircase Phenomena --
Naoto Matsuo, Fumiya Nakamura, Tadao Takada, Kazushige Yamana, Akira Heya (Univ Hyogo), Shin Yokoyama (Hiroshima Univ), Yasuhisa Omura (Kansai Univ)

(3) 11:30 - 11:45
Memory Application of Ultrafine FET utilizing Supramolecular Protein
Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST)

(4) 11:45 - 12:00
Distribution of Forming Characteristics in NiO-based ReRAM
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)

(5) 12:00 - 12:15
Effect of gate voltage application on the conversion efficiency of solar-cell
Kohei Oki, Takashi Kusakabe, Naoto matsuo, Akira Heya (Univ. of Hyogo)

----- Lunch ( 60 min. ) -----

----------------------------------------
Mon, Dec 14 PM (13:15 - 15:00)
----------------------------------------

(6) 13:15 - 13:30
Lamp-voltage dependence of FLA crystallization for a-Ge film
Shota Hirano, Akira Heya, Naoto Matsuo (Univ. of Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO)

(7) 13:30 - 13:45
Unseeded Growth of Poly Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing
Yoshiaki Nieda, Toru Takao (Nara Inst. of Sci.& Technol.), Masahiro Horita (Kyoto Univ.), Nobuo Sasaki (Japan women's Univ.), Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Sci.& Technol.)

(8) 13:45 - 14:00
Evaluation of In2O3 film deposited by RF magnetron sputtering
Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)

(9) 14:00 - 14:15
Characterization of GaxSn1-xO thin film by the mist CVD method
Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)

(10) 14:15 - 14:30
Dependence of MR effect on annealing temperature of IGZO
Shogo Miyamura, Haruki Shiga, Kota Imanishi, Asuka Fukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ)

(11) 14:30 - 14:45
Magnetic characteristic measurement of Cr-Si-N
Haruki Shiga, Shogo Miyamura, Kota Imanishi, Asuka Hukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.), Yashushi Hiroshima (KOA)

----- Break ( 15 min. ) -----

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Mon, Dec 14 PM (15:00 - 16:30)
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(12) 15:00 - 15:15
Self-Aligned Metal Double Gate Low-Temperature Poly-Ge TFT with Thin Channel Layer on a Glass Substrate
Yuya Nishimura, Akito Hara (Tohoku Gakuin Univ.)

(13) 15:15 - 15:30
Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor
Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)

(14) 15:30 - 15:45
Characteristic evaluation of electric current on infrared radiation in low-temperature poly-Si TFT
Shuhei Kitajima, Katsuya Kitou, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Masahide Inoue (Huawei Japan)

(15) 15:45 - 16:00
Research and development of Artificial Retina using thin film transistors
-- in vitro experiment using TFT --
Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryudai)

(16) 16:00 - 16:15
Operation verification of neural network using a simplified element by FPGA
Nao Nakamura, Ryuhei Morita, Yuki Koga, Hiroki Nakanishi, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)

(17) 16:15 - 16:30
Research and development of cellular neural network with a simplified structure
-- Operation verification by FPGA and variable resistance --
Hiroki Nakanishi, Ryuhei Morita, Yuki Koga, Nao Nakamura, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)

# Information for speakers
General Talk will have 10 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.


=== Technical Committee on Electronic Information Displays (EID) ===
# FUTURE SCHEDULE:

Thu, Jan 28, 2016 - Fri, Jan 29, 2016 (tentative): Toyama Univ. [Sat, Oct 24], Topics: Joint Meeting of Emissive / Non-Emissive Displays

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, Jan 22, 2016: Sanjo Conference Hall, The University of Tokyo [Wed, Nov 11], Topics: Interconnects, Package and related materials
Thu, Jan 28, 2016: Kikai-Shinko-Kaikan Bldg. [unfixed]
Thu, Mar 3, 2016 - Fri, Mar 4, 2016: Centennial Hall, Hokkaido Univ. [Fri, Dec 18], Topics: Functional Nanodevices and Related Technologies

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: rihito.kuroda.e3@tohoku.ac.jp


Last modified: 2015-10-22 23:12:38


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