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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)
DATE:
Thu, Nov 15, 2012 10:00 - 15:45
Fri, Nov 16, 2012 10:00 - 16:10
PLACE:
TOPICS:
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Thu, Nov 15 AM (10:00 - 11:45)
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----- Opening Talk ( 5 min. ) -----
(1) 10:05 - 10:55
[Invited Talk]
2012 SISPAD Review
-- quantum transport, new materials, atomistic molecular modeling, and other topics --
Yoshinari Kamakura (Osaka Univ.)
(2) 10:55 - 11:45
[Invited Talk]
2012 SISPAD Paper Review
-- Compact Model, Device Variability, Device Reliability --
Takahiro Iizuka (Hiroshima Univ.)
----- Lunch Break ( 75 min. ) -----
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Thu, Nov 15 PM (13:00 - 14:15)
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(3) 13:00 - 13:50
[Invited Talk]
High Performance SiC Power Devices and Modules
-- Miniaturization of System by Low-Ron and High Temperature Operation --
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM)
(4) 13:50 - 14:15
New design method for power devices using topology optimization based on the adjoint variable method
Katsuya Nomura, Tsuguo Kondoh, Tsuyoshi Ishikawa, Atsushi Kawamoto, Tadayoshi Matsumori, Takahide Sugiyama (TCRDL)
----- Break ( 15 min. ) -----
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Thu, Nov 15 PM (14:30 - 15:45)
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(5) 14:30 - 15:20
[Invited Talk]
Fluctuation of MOSFETs from Low-Frequency Noise to Thermal Noise Using a Novel Measurement System beyond 100 MHz
Kenji Ohmori (Uni. of Tsukuba)
(6) 15:20 - 15:45
Neutral and Attractive Traps in Random Telegraph Signal Noise Phenomena using (100)- and (110)-Oriented CMOSFETs
Jiezhi Chen, Izumi Hirano, Kosuke Tatsumura, Yuichiro Mitani (Toshiba Corp)
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Fri, Nov 16 AM (10:00 - 11:40)
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(7) 10:00 - 10:25
An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs
Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT)
(8) 10:25 - 10:50
Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS
Daiki Sato, Yasuhisa Omura (Kansai Univ.)
(9) 10:50 - 11:15
Empirical Pseudopotential Calculations of Two-Dimensional Electronic States in 4H-SiC Inversion layers
Ryuta Watanabe, Yoshinari Kamakura (Osaka Univ.)
(10) 11:15 - 11:40
Impact of Discrete Dopant in Characteristics of Nanowire Transistors
-- KMC and NEGF Study --
Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.)
----- Lunch ( 80 min. ) -----
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Fri, Nov 16 PM (13:00 - 14:40)
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(11) 13:00 - 13:25
Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures
Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST)
(12) 13:25 - 13:50
Monte Carlo Simulation of Phonon Transport in Silicon Thin Films Including Realistic Dispersion Relation
Kentaro Kukita (Osaka University), Yoshinari Kamakura (Osaka University/JST CREST)
(13) 13:50 - 14:15
Effect of a three-dimensional strain field on the electronic band structures of carbon nanotubes and graphene sheets
Ken Suzuki, Masato Ohnishi, Hideo Miura (Tohoku Univ.)
(14) 14:15 - 14:40
Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models --
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST)
----- Break ( 15 min. ) -----
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Fri, Nov 16 PM (14:55 - 16:10)
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(15) 14:55 - 15:20
ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.)
(16) 15:20 - 15:45
Design method of system LSI and SEA cell type DRAM with tunneling type transistor.
Ryosuke Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech)
(17) 15:45 - 16:10
Design Technology of stacked Type Chain PRAM Readout
Sho Kato, Shigeyoshi Watanabe (Shonan Inst, of Tech,)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Fri, Dec 7, 2012: Kyoto Univ. (Katsura) [Mon, Oct 15], Topics: Fabrication and Characterization of Si-related Materials and Devices
Mon, Feb 4, 2013: Kikai-Shinko-Kaikan Bldg. [unfixed]
Wed, Feb 27, 2013 - Thu, Feb 28, 2013: Hokkaido Univ. [Fri, Dec 7], Topics: Functional nanodevices and related technologies
Last modified: 2012-09-19 16:24:53
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