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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)
Assistant: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)

===============================================
Technical Committee on Component Parts and Materials (CPM)
Chair: Yasushi Takano (Shizuoka Univ.) Vice Chair: Satoru Noge (Numazu National College of Tech.)
Secretary: Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.)
Assistant: Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.)

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Yoshitaka Sasago (Hitachi)
Assistant: Rihito Kuroda (Tohoku Univ.)

DATE:
Wed, May 28, 2014 10:50 - 17:10
Thu, May 29, 2014 09:00 - 16:15

PLACE:


TOPICS:


----------------------------------------
Wed, May 28 AM (10:50 - 17:10)
----------------------------------------

(1) 10:50 - 11:10
Dislocation density dependence of strain relaxation in GaInN/GaN heterostructure
Koji Ishihara, Yasunari Kondo, Hiroyuki Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.)

(2) 11:10 - 11:30
Investigations on Sb incoporations and surface morphologies of GaNSb
Daisuke Komori, Hiroki Sasajima, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (meijo Univ.), Isamu Akasaki (meijo Univ./nagoya Univ.)

----- Break ( 90 min. ) -----

(3) 13:00 - 13:20
Evaluation of photocatalytic properties of TiN powders annealed in air
Masaaki Isai, Yoshitaka Yamada (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.)

(4) 13:20 - 13:40
Fabrication of titanium oxide nanostructures for photoelectrode of dye sensitized solar cells
Naoki Kishi, Masayuki Nozaki, Shota Sakakibara, Takuya Tsuzuki, Arata Fujimitsu, Tetsuo Soga (Nagoya Inst. of Tech.)

(5) 13:40 - 14:00
All carbon p-i-n solar cell by microwave surface wave plasma CVD
Dilip Chandra Ghimire, Sudhip Adhikari, Susumu Ichimura, Hideo Uchida, Koichi Wakita, Masayoshi Umeno (Chubu Univ.)

(6) 14:00 - 14:20
Optimization of the preparation condition of LiMn2O4 film
Yoshihiro Hayakawa, Masaaki Isai, Yasumasa Tomita (Shizuoka Univ.)

----- Break ( 15 min. ) -----

(7) 14:35 - 14:55
Influence of the stacking condition on Magnetoelectric effect in ferroelectric and ferromagnetic laminated composite
Hiroki Iwamizu, Isao Kagomiya, Ken-ichi Kakimoto (Nitech)

(8) 14:55 - 15:15
Crystal Structure and Electric/Magnetic Properties of BiFe1-xMnxO3 Thin Films Grown on SrTiO3(100) Substrate Using Pulsed Laser Deposition Method
Takaaki Inaba, Nobuyuki Iwata, Yuta Watabe, Keisuke Oshima, Kouichi Takase, Takuya Hashimoto, Hiroshi Yamamoto (Nihon Univ.)

(9) 15:15 - 15:35
Fabrication of Perovskite-type Iron and Manganese Oxides Using Highly Dense Targets by Pulsed Laser Deposition Method
Keisuke Oshima, Nobuyuki Iwata, Yuta Watabe, Takaaki Inaba, Takuya Hashimoto, Kouichi Takase, Hiroshi Yamamoto (Nihon Univ.)

(10) 15:35 - 15:55
First-principles simulation on electron-scattering process in magnetoresistive memory
Masaaki Araidai (Nagoya Univ.), Takahiro Yamamoto (Tokyo Univ. of Sci.), Kenji Shiraishi (Nagoya Univ.)

----- Break ( 15 min. ) -----

(11) 16:10 - 16:30
Static and dynamic operations of MOSFET by propagated surface plasmon signal
Hiroki Sakai, Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Masashi Ota, Yu Kimura, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.)

(12) 16:30 - 16:50
Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application
Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech)

(13) 16:50 - 17:10
Electrical and THz difference frequency generation characteristics of GaSe crystals prepared by liquid phase epitaxy under controlled Se vapor pressure
Kohei Suzuki, Yuki Nagai, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.)

----------------------------------------
Thu, May 29 AM (09:00 - 16:15)
----------------------------------------

(14) 09:00 - 09:20
Investigation of laser scribing in fabrication of nitride-based LEDs for improvement of light-absorptive
Shun Hanai (Meijo Univ.), Atsushi Suzuki, Tsukasa Kitano (ELSEED), Daisuke Iida, Takahisa Kato, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)

(15) 09:20 - 09:40
Development of 760nm DFB-laser diodes for oxygen detection
Hidenori Kitajima, Akira Higuchi, Atsushi Fujihara, Hideyuki Naito, Junya Maeda (HPK)

(16) 09:40 - 10:00
The effects of polarization charges to carrier transport in nitride-based LEDs
Syouta Katsuno, Kento Hayashi, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)

(17) 10:00 - 10:20
Application to flame sensor of nitride-based hetero-field-effect-transistor-type ultraviolet photo detectors
Yuma Yamamoto, Takuya Murase, Mami Ishiguro, Tomoaki Yamada, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.)

----- Break ( 15 min. ) -----

(18) 10:35 - 10:55
Development of Narrow Band LED Sources and Their Application to Dermatology
Masahiro Ogasawara (Mignon Belle), Takashi Hirao, Shizuo Fujita (Kyoto Univ.)

(19) 10:55 - 11:15
Characterization and analysis of hysteresis properties in insulated-gate GaAs-based nanowire FETs
Ryota Kuroda, Xiang Yin, Masaki Sato, Seiya Kasai (Hokkaido Univ.)

(20) 11:15 - 11:35
Surface treatment and homoepitaxial growth on AlN substrate
Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral)

(21) 11:35 - 11:55
High quality SiC grwoth utilizing threading dislocation conversion during solution growth
Shunta Harada, Yuji Yamamoto, Toru Ujihara (Nagoya Univ.)

----- Break ( 85 min. ) -----

(22) 13:20 - 13:40
Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations
Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT)

(23) 13:40 - 14:00
Microwave reflectance from SiC in the high injection condition
-- Toward accurate evaluation of the carrier lifetime --
Masashi Kato, Yuto Mori, Masaya Ichimura (NITech)

(24) 14:00 - 14:20
P - GaN by Mg Ion Implantation for Power Device Applications
Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.)

(25) 14:20 - 14:40
Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

----- Break ( 15 min. ) -----

(26) 14:55 - 15:15
Photo-response of photochemically deposited SnO2 thin films
Takanori Hounoki, Masaya Ichimura (NIT)

(27) 15:15 - 15:35
Preparation of SnS thin films on glasses using chemical bath depostition
Yuuki Yamanaka, Yasushi Takano (Shizuoka Univ.)

(28) 15:35 - 15:55
Fabrication of SnS thin film by the light-assisted electrochemical deposition method and application to CdS/SnS heterojunction cells
Yoshikazu Tanaka, Masaya Ichimura (NIT)

(29) 15:55 - 16:15
Electrical characterization of corundum-structured oxides for device applications
Kentaro Kaneko, Norihiro Suzuki, Sam-Dong Lee, Masashi Kitajima, Kazuaki Akaiwa, Shizuo Fujita (Kyoto Univ.)

# Information for speakers
General Talk will have 14 minutes for presentation and 6 minutes for discussion.


=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Jul 10, 2014 - Fri, Jul 11, 2014: Toyohashi Univ. of Tech. VBL [Wed, May 14], Topics: Sensing Devices, MEMS, etc
Fri, Aug 1, 2014: Kikai-Shinko-Kaikan Bldg. B3-1 [Mon, Jun 16], Topics: Semiconductor Process and Devices (surface, interface, reliability), others

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Fri, Jun 20, 2014: Kikai-Shinko-Kaikan Bldg. [Mon, Apr 14]
Thu, Aug 21, 2014 - Fri, Aug 22, 2014: Otaru Economy Center [Mon, Jun 16]

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Jun 19, 2014: VBL, Nagoya Univ. [Wed, Apr 9], Topics: Material Science and Process Technology for MOS Devices and Memories
Mon, Aug 4, 2014 - Tue, Aug 5, 2014: Hokkaido Univ., Multimedia Education Bldg. [Mon, Jun 9]


Last modified: 2014-05-11 21:42:44


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