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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.)

DATE:
Thu, Oct 9, 2008 13:30 - 17:45
Fri, Oct 10, 2008 10:00 - 17:15

PLACE:
New Industry Creation Hatchery Center, Tohoku University(6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan. By taking Bus from Sendai station, BUS pool #9, please ride on "Dobutsukouen JUNKAN", "MIYAKYO-DAI" or "AOBA-DAI". The nearest BUS stop for the FFF is "JOUHOUKAGAKUKENKYUUKA MAE" (just after the Faculty of Science and the Faculty of Phermacy Science". http://www.fff.niche.tohoku.ac.jp/en/index.php?%5B%5BMap%5D%5D. Associate Prof. Akinobu Teramoto. 022-795-3977)

TOPICS:
Process Science and Novel Process Technologies

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Thu, Oct 9 PM (13:30 - 17:45)
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(1) 13:30 - 14:00
Evaluation of Post Cu-CMP Cleaning Chemicals for Non-Porous Ultra Low-k Dielectric Fluorocarbon Film
Xun Gu, Takenao Nemoto, Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.)

(2) 14:00 - 14:30
Investigation of Novel End-Point-Detection for Ta/Cu CMP
Xun Gu, Takenao Nemoto (Tohoku Univ.), Ara Philipossian, Yasa Adi Sampurno (Univ. of Arizona/Araca), Jiang Cheng (Araca), Yun Zhuang (Univ. of Arizona/Araca), Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.)

(3) 14:30 - 15:00
Planarization of CW laser crystallized Si thin films by chemical mechanical polishing using slurry with ethyl alcohol
Masayuki Numata, Shin-Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito (Tohoku Univ.)

(4) 15:00 - 15:30
Development of Multi-Scale Simulator for lifetime of Interconnect and its application to Cu lines
Hideyuki Tsuboi, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A Del Calpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

----- Break ( 15 min. ) -----

(5) 15:45 - 16:15
Computational Study on Friction Behavior and Nanostructure of Diamond-like Carbon (DLC)
Takanori Kuriaki, Yusuke Morita, Tasuku Onodera, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(6) 16:15 - 16:45
Tight-Binding Quantum Chemistry Study on Excitation Properties of Perylene with Acrylic Acid on Anatas(001) Surface
Chen Lv, Kei Ogiya, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(7) 16:45 - 17:15
A Computational Study on Secondary Electron Emission property of Protecting Layer for Plasma Display Panels
Kazumi Serizawa, Itaru Yamashita, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Masaki Kitagaki (Hiroshima Univ.), Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Del Carpio Carlos Del Carpio, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.)

(8) 17:15 - 17:45
Development of characterization/spectroscopic simulators based on ultra-accelerated quantum chemical molecular dynamics method and its application to Si semiconductors
Akira Endou, Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Tasuku Onodera, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

----- Social Gathering -----

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Fri, Oct 10 AM (10:00 - 17:15)
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(9) 10:00 - 10:30
Electron Transport Simulation of Dye-sensitized TiO2 Electrode based on 3D Porous Structure
Kei Ogiya, Chen Lv, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(10) 10:30 - 11:00
A Computational Chemistry Study on Structure and Carrier Transport Property of Light Emitting Materials
Itaru Yamashita, Hiroaki Onuma, Kazumi Serizawa, Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ)

(11) 11:00 - 11:30
Structure Analysis of Phosphors Materials by Experiment Integrated Computational Chemistry
Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(12) 11:30 - 12:00
Development of Ultra-accelerated Quantum Chemical Molecular Dynamics Method for Ferroelectric Properties of Perovskite BaTiO3
HongJun Xiao, Takashi Hirai, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

----- Lunch Break ( 60 min. ) -----

(13) 13:00 - 13:30
The Application Property of B18H22 Implantation for Millisecond Annealing
Yoji Kawasaki, Seiichi Endo, Masashi Kitazawa, Yoshiki Maruyama, Tomohiro Yamashita, Takashi Kuroi, Hidefumi Yoshimura, Masahiro Yoneda (Renesas)

(14) 13:30 - 14:00
A study on work function modulation in PtSi alloying with Hf
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Tech)

(15) 14:00 - 14:30
Statistical evaluation of characteristics variation and RTS noise of MOSFETs
Takafumi Fujisawa, Shigetoshi Sugawa, Syunichi Watabe, Kenichi Abe, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)

(16) 14:30 - 15:00
Impact of Fully Depleted Silicon-On-Insulator Accumualation-mode CMOS on Si(110)
Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

----- Break ( 15 min. ) -----

(17) 15:15 - 15:45
Correlation between Stress Induced Leakage Current and Random Telegraph Signal noise
Yuki Kumagai, Akinobu Teramoto, Kenichi Abe, Takafumi Fujisawa, Syunichi Watabe, Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

(18) 15:45 - 16:15
Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba)

(19) 16:15 - 16:45
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)

(20) 16:45 - 17:15
The data analysis and measurement technique of the atomic force microscopy for the atomically flat silicon surface
Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi (Tohoku Univ)

# Information for speakers
General Talk (30) will have 25 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Nov 13, 2008 - Fri, Nov 14, 2008: Kikai-Shinko-Kaikan Bldg. [Fri, Sep 12], Topics: Process, Device, Circuit Simulation, etc.
Fri, Dec 5, 2008: Kyoto University, Katsura Campus, A1-001 [Fri, Oct 17], Topics: Fabrication and Characterization of Si and Si-related Materials and Devices
Mon, Jan 26, 2009: Kikai-Shinko-Kaikan Bldg. [unfixed]

# SECRETARY:
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-mail