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Technical Committee on Electron Devices (ED)
Chair: Kunio Tsuda (Toshiba) Vice Chair: Michihiko Suhara (TMU)
Secretary: Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.)
Assistant: Tatsuya Iwata (TUT), Junji Kotani (Fjitsu Lab.)

===============================================
Technical Committee on Microwaves (MW)
Chair: Masahiro Muraguchi (TUS)
Vice Chair: Yoshinori Kogami (Utsunomiya Univ.), Hiroshi Okazaki (NTT DOCOMO), Kenichi Tajima (Mitsubishi Electric)
Secretary: Takahiro Nakamura (HITACHI), Takashi Shimizu (Utsunomiya Univ.)
Assistant: Mizuki Motoyoshi (Tohoku Univ.), Satoshi Yoshida (Kagoshima Univ.)

DATE:
Thu, Jan 17, 2019 09:30 - 17:15
Fri, Jan 18, 2019 10:40 - 15:45

PLACE:
(http://www.hitachi.com/rd/about/location/crl/index.html. 〒185-8601 国分寺市東恋ヶ窪1-280. +81-80-1072-8741)

TOPICS:
Compound semiconductor, High speed and High frequency devices/Microwave technologies

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Thu, Jan 17 AM (09:30 - 10:50)
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----- Opening Address ( 5 min. ) -----

(1) 09:35 - 10:00
Fundamental study on TEM wave analysis for a high-loss material attached coaxial probe via the moment method
Kouji Shibata, Masaki Kobayashi (Hachinohe Institute of Tech.)

(2) 10:00 - 10:25
Development of Electromagnetically-Coupled Half-Wavelength Resonator Filter
Ayaka Shimizu, Toshio Ishizaki (Ryukoku Univ.)

(3) 10:25 - 10:50
Consideration of indirect measurement of S-parameters connecting known loads to port different from DUT
Toshikazu Sekine, Yasuhiro Takahashi (Gifu Univ.)

----- Break ( 10 min. ) -----

----------------------------------------
Thu, Jan 17 AM (11:00 - 11:50)
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(4) 11:00 - 11:50
[Special Talk]
Study of Runway Surveillance Radar System and Railway Radio Communication System using 90/100GHz band and the recent trend of international standardization
-- Advanced Wireless System with Radio over fiber and Millimeter-wave Technology --
Nobuhiko Shibagaki (Hitachi kokusai)

----- Lunch Break ( 60 min. ) -----

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Thu, Jan 17 PM (12:50 - 13:40)
Chair: Masataka Ohira (Saitama Univ.)
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(5) 12:50 - 13:40
[Special Talk]
Briefing Report on European Microwave Week 2018
Hiroaki Ikeuchi (Toshiba), Chen Chun-Pin (Kanagawa Univ.), Yu Ushijima, Jun Kamioka (Mitsubishi Ele. Corp.), Kyoya Takano (Tokyo Univ. of Science), Kentaro Murata (Toshiba), Takashi Shimizu (Utsunomiya Univ.)

----- Break ( 10 min. ) -----

----------------------------------------
Thu, Jan 17 PM (13:50 - 14:50)
Chair: Masataka Ohira (Saitama Univ.)
----------------------------------------

(6) 13:50 - 14:10
[Special Talk]
Study on SIS mixer and Waveguide Technologies for Wideband and Low-noise Receivers at Submillimeter Wavelengths
Takafumi Kojima (NAOJ)

(7) 14:10 - 14:30
[Special Talk]
The Open-end Microstrip Line of Fixed Width Terminations Using Lossy Grayscale Inkjet Printing
-- Introduction of IEEE Transaction for Young Engineering Award 2018 --
Yasuo Morimoto (Mitsubishi Electric)

(8) 14:30 - 14:50
[Special Talk]
A Wideband Receiver With Frequency and Spatial Interference Filtering for Multi-Antenna Systems
Naoki Oshima, Masaki Kitsunezuka, Kenta Tsukamoto, Kazuaki Kunihiro (NEC)

----- Break ( 10 min. ) -----

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Thu, Jan 17 PM (15:00 - 16:15)
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(9) 15:00 - 15:25
Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.)

(10) 15:25 - 15:50
(See Japanese page.)

(11) 15:50 - 16:15
Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure
Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.)

----- Break ( 10 min. ) -----

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Thu, Jan 17 PM (16:25 - 17:15)
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(12) 16:25 - 17:15
[Invited Talk]
Silicon Semiconductor, "past, present, and future"
Shin'ichiro Kimura (Hitachi)

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Fri, Jan 18 AM (10:40 - 11:55)
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(13) 10:40 - 11:05
The failure mode analysis on GaN-HEMT under High temperature operation
Yasuyo Yotsuda (SEDI), Yasunori Tateno, Takumi Yonemura, Masato Furukawa, Hiroshi Yamamoto (SEI), Yukinori Nose, Satoshi Shimizu (SEDI)

(14) 11:05 - 11:30
Investigation of the Pulsed-IV Degradation Mechanism of GaN-HEMT under High Temperature Storage Tests
Yasunori Tateno (Sumitomo Electric), Yasuyo Kurachi (Sumitomo Electric Device Innovations), Hiroshi Yamamoto, Takashi Nakabayashi (Sumitomo Electric)

(15) 11:30 - 11:55
Study on cascode configuration with GaN HEMT and Si diode for high power RF-DC conversion
Kosuke Urata, Kosuke Ajiro (Saga Univ.), Yutaro Yamaguti, Otuka Tomohiro, Sinjo Shintaro (Mitsubishi Electric Corp.), Tosiyuki Oisi (Saga Univ.)

----- Lunch Break ( 65 min. ) -----

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Fri, Jan 18 PM (13:00 - 13:50)
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(16) 13:00 - 13:50
[Invited Lecture]
Ultra-high-speed IC technologies for optical and wireless communications
Hideyuki Nosaka, Munehiko Nagatani, Hiroshi Hamada, Teruo Jyo, Hitoshi Wakita, Takuya Tsutsumi, Hiroki Sugiyama, Miwa Mutoh, Minoru Ida, Hideaki Matsuzaki (NTT)

----- Break ( 10 min. ) -----

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Fri, Jan 18 PM (14:00 - 15:45)
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(17) 14:00 - 14:25
Design of Wideband Bandpass Filters with Quasi-Elliptic Characteristics Using Coupled Short-Circuited Stub
Kosuke Keima, Zhewang Ma, Masataka Ohira (Saitama Univ.)

(18) 14:25 - 14:50
Design and Fabrication of Microstrip Reconfigurable Bandpass Filter Using Transversal Resonator Array
Shuma Hashimoto, Masataka Ohira, Zhewang Ma (Saitama Univ.)

(19) 14:50 - 15:15
Design of Microstrip Tunable Filtering Antenna with Constant Absolute Bandwidth
Tomoyasu Soma, Masataka Ohira, Zhewang Ma (Saitama Univ.)

(20) 15:15 - 15:40
Design of Quasi-Millimeter-Wave SIW Bandpass Filter with Transmission Zeros Using TE102 Mode for Negative Coupling
Yuta Shimizu, Masataka Ohira, Zhewang Ma (Saitama Univ)

----- Closing Address ( 5 min. ) -----

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Special Talk (MTT-S Japan Young Engineer Award特別講演会) will have 15 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter.


=== Technical Committee on Electron Devices (ED) ===
# FUTURE SCHEDULE:

Thu, Apr 18, 2019 (changed): RIEC, Tohoku Univ. [Fri, Feb 15], Topics: Organic devices, oxide devices, general

# SECRETARY:
Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E-mail : m
Toshiyuki Oishi(Saga Unv.)
TEL : 0952-28-8642
E-mail :oi104cc-u

=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Thu, Mar 14, 2019 - Fri, Mar 15, 2019<br> (changed): [Wed, Jan 16], Topics: Microwave Integrated Circuit/Microwave Technologies
Mon, Apr 22, 2019: Kikai-Shinko-Kaikan Bldg. [Wed, Feb 20], Topics: Microwave, Wireless Power Transfer, etc.

# SECRETARY:
Mizuki Motoyoshi (Tohoku University)
E-mail: ec
or Takahiro Nakamura (Hitachi, Ltd.)
E-mail:


Last modified: 2019-01-17 00:15:17


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