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=============================================== Technical Committee on Electron Device (ED) Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.) Secretary: Manabu Arai (New JRC), Shin-ichiro Takatani (Hitachi) Assistant: Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Kiichi Kamimura (Shinshu Univ.) Vice Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Secretary: Seiji Toyoda (NTT), Hidehiko Shimizu (Niigata Univ.) Assistant: Yasushi Takemura (Yokohama National Univ.), Naoki Oba (NTT) =============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Shinji Tsuji (Hitachi) Vice Chair: Yoshiaki Nakano (Univ. of Tokyo) Secretary: Kouji Nakahara (Hitachi), Takayuki Yamanaka (NTT) DATE: Thu, Oct 11, 2007 13:00 - 18:00 Fri, Oct 12, 2007 09:00 - 16:55 PLACE: Memorial Academy Hall, Bunkyo Campus, University of Fukui(3-9-1, Bunkyo, Fukui-shi, 910-8507, Japan. Echizen Railway (Awara-Mikuni Line); Fukui Station → Fukudai-mae-nishi-fukui Station (approx. 10 minutes). http://www.fukui-u.ac.jp/eng/access/index.html. Prof. Masaaki Kuzuhara. 0776-27-9714) TOPICS: Nitride Based Optical and Electronic Devices, Materials and Related Technologies ---------------------------------------- Thu, Oct 11 PM (13:00 - 18:00) ---------------------------------------- ----- Opening Address ( 5 min. ) ----- (1) 13:05 - 13:30 Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations Atsushi Yamaguchi (Kanazawa Inst. of Technology) (2) 13:30 - 13:55 Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) (3) 13:55 - 14:20 Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ----- Break ( 10 min. ) ----- (4) 14:30 - 14:55 Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.) (5) 14:55 - 15:20 High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.) (6) 15:20 - 15:45 Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED -- Moisture control in NH3 gas for MOVPE growth of LED structure -- Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO) (7) 15:45 - 16:10 340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN) ----- Break ( 10 min. ) ----- (8) 16:20 - 16:45 Characteristics of polarized emission from nonpolar m-plane InGaN-based LEDs Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta (Rohm Co., Ltd.) (9) 16:45 - 17:10 Suppression of COD in pure-blue Lasers with current injecition-free region near the laser facet. Osamu Goto (Sony), Yoshitsugu Ohizumi, Miwako Shouji, Takayuki Tanaka, Yukio Hoshina, Makoto Ohta (Sony Shiroishi Semiconductor Inc.), Yoshifumi Yabuki, Shigetaka Tomiya, Masao Ikeda (Sony) (10) 17:10 - 17:35 Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.) (11) 17:35 - 18:00 UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ---------------------------------------- Fri, Oct 12 AM (09:00 - 16:55) ---------------------------------------- (12) 09:00 - 09:25 Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui) (13) 09:25 - 09:50 Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) (14) 09:50 - 10:15 Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) (15) 10:15 - 10:40 Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.) ----- Break ( 10 min. ) ----- (16) 10:50 - 11:15 Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) (17) 11:15 - 11:40 Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) (18) 11:40 - 12:05 Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) (19) 12:05 - 12:30 Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ----- Lunch Break ( 80 min. ) ----- (20) 13:50 - 14:15 Electrical characterization of homoepitaxially-grown pn GaN diodes Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) (21) 14:15 - 14:40 Growth Condition of Blue Emitting InGaN Microcrystals Hisashi Kanie, Kenichi Akashi (TUS) (22) 14:40 - 15:05 Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST) (23) 15:05 - 15:30 Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) ----- Break ( 10 min. ) ----- (24) 15:40 - 16:05 Preparation of GaN Crystals by a Reaction of Ga with Li3N Akira Mabuchi, Takayoshi Hirano, Takashi Sugiura, HIdekiMinoura (Gifu Univ) (25) 16:05 - 16:30 Fabrication of MgZnO films by molecular precursor method and its application to UV-transparent electrodes Yoshihiro Mashiyama, Kaori Yoshioka, Shigetoshi Komiyama, Shinsuke Adachi, Mitsunobu Satou, Tohru Honda (Kogakuin Univ.) (26) 16:30 - 16:55 Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.) === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Fri, Nov 16, 2007: [Thu, Sep 20] Tue, Nov 27, 2007 - Wed, Nov 28, 2007: Tohoku Univ. Research Institute of Electrical Communication [Thu, Sep 20] Wed, Jan 16, 2008 - Fri, Jan 18, 2008: Kikai-Shinko-Kaikan Bldg. [Fri, Nov 9], Topics: Compound Semiconductor IC, High-speed and high-frequency devices Wed, Jan 30, 2008 - Thu, Jan 31, 2008: [Fri, Nov 9] # SECRETARY: Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   i njr Shinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:        er  Koichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：  aecl Hara Naoki （Fujitsu Lab.） TEL : 046-250-8242、FAX : 046-250-4337 E-mail :   nf    === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Nov 16, 2007 - Sat, Nov 17, 2007: Nagaoka University of Technology [Wed, Sep 19], Topics: Process of Thin Film formation and Materials, etc. Thu, Jan 17, 2008 - Fri, Jan 18, 2008: Kikai-Shinko-Kaikan Bldg [Wed, Nov 14] # SECRETARY: Hidehiko Shimizu（Niigata University） TEL 025-262-6811, FAX 025-262-6811 E-mail:   engi -u Yasushi Takemura（Yokohama National University） TEL 045-339-4151, FAX 045-339-4151 E-mail:  y === Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Thu, Nov 1, 2007 - Fri, Nov 2, 2007: [Tue, Aug 21] Fri, Dec 7, 2007: Kikai-Shinko-Kaikan Bldg. [Thu, Oct 18] Mon, Jan 28, 2008 - Tue, Jan 29, 2008: [Thu, Nov 15] # SECRETARY: Kouji Nakahara (Hitachi) TEL +81-42-323-1111, FAX +81-42-327-7786 E-mail:  u guTakayuki Yamanaka TEL +81-46-240-4403, FAX +81-46-240-2859 E-mail: t  aecl# ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ Last modified: 2007-09-03 08:57:13 |
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