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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Manabu Arai (New JRC), Shin-ichiro Takatani (Hitachi)
Assistant Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiichi Kamimura (Shinshu Univ.)
Vice Chair Kanji Yasui (Nagaoka Univ. of Tech.)
Secretary Seiji Toyoda (NTT), Hidehiko Shimizu (Niigata Univ.)
Assistant Yasushi Takemura (Yokohama National Univ.), Naoki Oba (NTT)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Shinji Tsuji (Hitachi)
Vice Chair Yoshiaki Nakano (Univ. of Tokyo)
Secretary Kouji Nakahara (Hitachi), Takayuki Yamanaka (NTT)

Conference Date Thu, Oct 11, 2007 13:00 - 18:00
Fri, Oct 12, 2007 09:00 - 16:55
Topics Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Conference Place Memorial Academy Hall, Bunkyo Campus, University of Fukui 
Address 3-9-1, Bunkyo, Fukui-shi, 910-8507, Japan
Transportation Guide Echizen Railway (Awara-Mikuni Line); Fukui Station → Fukudai-mae-nishi-fukui Station (approx. 10 minutes)
http://www.fukui-u.ac.jp/eng/access/index.html
Contact
Person
Prof. Masaaki Kuzuhara
0776-27-9714

Thu, Oct 11 PM 
13:00 - 18:00
  13:00-13:05 Opening Address ( 5 min. )
(1) 13:05-13:30 Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations Atsushi Yamaguchi (Kanazawa Inst. of Technology)
(2) 13:30-13:55 Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST)
(3) 13:55-14:20 Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST)
  14:20-14:30 Break ( 10 min. )
(4) 14:30-14:55 Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.)
(5) 14:55-15:20 High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.)
(6) 15:20-15:45 Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED
-- Moisture control in NH3 gas for MOVPE growth of LED structure --
Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO)
(7) 15:45-16:10 340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN)
  16:10-16:20 Break ( 10 min. )
(8) 16:20-16:45 Characteristics of polarized emission from nonpolar m-plane InGaN-based LEDs Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta (Rohm Co., Ltd.)
(9) 16:45-17:10 Suppression of COD in pure-blue Lasers with current injecition-free region near the laser facet. Osamu Goto (Sony), Yoshitsugu Ohizumi, Miwako Shouji, Takayuki Tanaka, Yukio Hoshina, Makoto Ohta (Sony Shiroishi Semiconductor Inc.), Yoshifumi Yabuki, Shigetaka Tomiya, Masao Ikeda (Sony)
(10) 17:10-17:35 Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.)
(11) 17:35-18:00 UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.)
Fri, Oct 12 AM 
09:00 - 16:55
(12) 09:00-09:25 Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui)
(13) 09:25-09:50 Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI)
(14) 09:50-10:15 Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices)
(15) 10:15-10:40 Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.)
  10:40-10:50 Break ( 10 min. )
(16) 10:50-11:15 Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
(17) 11:15-11:40 Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.)
(18) 11:40-12:05 Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
(19) 12:05-12:30 Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba)
  12:30-13:50 Lunch Break ( 80 min. )
(20) 13:50-14:15 Electrical characterization of homoepitaxially-grown pn GaN diodes Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.)
(21) 14:15-14:40 Growth Condition of Blue Emitting InGaN Microcrystals Hisashi Kanie, Kenichi Akashi (TUS)
(22) 14:40-15:05 Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST)
(23) 15:05-15:30 Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.)
  15:30-15:40 Break ( 10 min. )
(24) 15:40-16:05 Preparation of GaN Crystals by a Reaction of Ga with Li3N Akira Mabuchi, Takayoshi Hirano, Takashi Sugiura, HIdekiMinoura (Gifu Univ)
(25) 16:05-16:30 Fabrication of MgZnO films by molecular precursor method and its application to UV-transparent electrodes Yoshihiro Mashiyama, Kaori Yoshioka, Shigetoshi Komiyama, Shinsuke Adachi, Mitsunobu Satou, Tohru Honda (Kogakuin Univ.)
(26) 16:30-16:55 Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.)

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: er
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-4337
E- : nf 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Hidehiko Shimizu(Niigata University)
TEL 025-262-6811, FAX 025-262-6811
E-: engi-u
Yasushi Takemura(Yokohama National University)
TEL 045-339-4151, FAX 045-339-4151
E-: y 
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Kouji Nakahara (Hitachi)
TEL +81-42-323-1111, FAX +81-42-327-7786
E-: ugu
Takayuki Yamanaka
TEL +81-46-240-4403, FAX +81-46-240-2859
E-: taecl 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2007-09-03 08:57:13


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