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Technical Committee on Electron Device (ED)
Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Toru Kaji (Toyota Central R&D Labs.)
Secretary: Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

===============================================
Technical Committee on Component Parts and Materials (CPM)
Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Vice Chair: Yasushi Takemura (Yokohama National Univ.)
Secretary: Naoki Oba (NTT), Satoru Noge (Numazu National College of Tech.)
Assistant: Tadayuki Imai (NTT), Katsuya Abe (Shinshu Univ.)

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant: Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

DATE:
Thu, May 13, 2010 13:30 - 17:05
Fri, May 14, 2010 10:00 - 14:45

PLACE:
Research Institute for Electronics, Hamamatsu Caumpus, Shizuoka University(3-5-1, Jo-hoku, Naka-ku, Hamamatsu-shi, Shizuoka JAPAN.http://www.shizuoka.ac.jp/ippan/hamamatsu.html. Assoc. Prof. Hiroya Ikeda, Research Institute of Electronics, Shizuoka Univ.)

TOPICS:
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials)

----------------------------------------
Thu, May 13 PM (13:30 - 17:05)
----------------------------------------

(1) 13:30 - 13:55
Measurement of Electron Traps in n-GaN on Si (111) Substrates by Deep-Level Transient Spectroscopy
Arata Watanabe, Takashi Egawa (Nagoya Inst. of Tech.)

(2) 13:55 - 14:20
Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates
Kazuhiro Nagai, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.)

(3) 14:20 - 14:45
Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure
Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA)

(4) 14:45 - 15:10
Theoretical study on novel Si single-electron refrigerator
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.)

----- Break ( 15 min. ) -----

(5) 15:25 - 15:50
Charging phenomena of a single electron in P-doped Si SOI-MOSFETs
Earfan Hamid, Juli ChaTarido, Sakito Miki, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.)

(6) 15:50 - 16:15
Single Photon Detection in Single Dot and Multi Dot Channel Phosphorus-Doped SOI-FET
Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno, Michiharu Tabe (Shiuzoka Univ.)

(7) 16:15 - 16:40
Effect of Gravity on the Growth of Alloy Semiconductors Bulk Crystals
Yasuhiro Hayakawa, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Hisashi Morii, Toru Aoki, Akira Tanaka, Yasunori Okano (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Sci.&Tech.), Yuko Inatomi (JAXA)

(8) 16:40 - 17:05
Effect of Temperature on the Formation of ZnS Nanostructures and Properties
Mani Navaneethan (Shizuoka Univ.), Jayaram Archana, K. D. Nisha (SMR Univ), Mukannan Arivanandhan (Shizuoka Univ.), Suruttaiyaudaiyar Ponnusamy, Chellamuthu Muthamizhchelvan (SMR Univ), Yasuhiro Hayakawa (Shizuoka Univ.)

----------------------------------------
Fri, May 14 AM (10:00 - 12:20)
----------------------------------------

(9) 10:00 - 10:25
A step-annealing effect on SrS:Cu films for blue EL elements
Masaaki Isai, Suguru Kato (Shizuoka Univ.)

(10) 10:25 - 10:50
Investigation of deposition condition of LiMn2O4 films prepared by RF magnetron sputtering
Mitsuhiro Nakamura, Masaaki Isai (Shizuoka Univ.)

(11) 10:50 - 11:15
Preparation and evaluation of Ga2O3 oxygen sensors
Shinya Kayano, Naoya Yamaguchi, Masaaki Isai (Shizuoka Univ.)

----- Break ( 15 min. ) -----

(12) 11:30 - 11:55
Preparation of Pt-deposited TiO2 films and evaluation of photocatalystic properties
Ikuta Nakamura, Tatsuya Ito, Masaaki Isai (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.)

(13) 11:55 - 12:20
Study of Large Area CdTe X-ray and γ-ray Imaging Detectors Grown by MOVPE
-- Study of growth condition for high quality CdTe/Si layer --
Tatsuhiko Goto, Kitau Egawa, Hirohisa Ogawa, Hisato Doyoshita, Hiroyuki Fukuta, Hiroaki Inuzuka, Tadahiro Tachi, Naoya Fujimura, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Of Tech.)

----------------------------------------
Fri, May 14 PM (13:30 - 14:45)
----------------------------------------

(14) 13:30 - 13:55
Intelligent UV sensor composed of GaN-based photodiode and Si-charge transfer type signal processor
ChangYong Lee, Fumiya Matsuno, Yoshinori Hashimoto, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.)

(15) 13:55 - 14:20
Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.)

(16) 14:20 - 14:45
Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure
Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.


=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Jun 17, 2010 - Fri, Jun 18, 2010: JAIST [Thu, Apr 15], Topics: Process and device technology of semiconductors (surface, interface, reliability, etc.)
Wed, Jun 30, 2010 - Fri, Jul 2, 2010: Tokyo Inst. of Tech. Ookayama Campus [Thu, Apr 15], Topics: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices

# SECRETARY:
Koichi Murata(NTT)
TEL:+81-46-240-2871、FAX:+81-46-270-2872
E-mail: aecl
Hara Naoki (Fujitsu Lab.)
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E-mail : o
Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E-mail : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E-mail : t

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Fri, Jun 25, 2010: Kikai-Shinko-Kaikan Bldg. [Thu, Apr 15], Topics: Summer Meeting of materials and devices
Thu, Jul 29, 2010 - Fri, Jul 30, 2010: Michino-Eki Shari Meeting Room [Mon, May 24]
Thu, Aug 26, 2010 - Fri, Aug 27, 2010: Chitose Arcadia Plaza [Wed, Jun 16]

# SECRETARY:
Satoru Noge (Numazu National College of Technology)
E-mail: s-ge-ct
Katsuya Abe (Shinshu University)
E-mail: abens-u

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Tue, Jun 22, 2010: An401・402 Inst. Indus. Sci., The Univ. of Tokyo [Wed, Apr 14], Topics: Science and Technology for Dielectric Thin Films for MIS Devices
Wed, Jun 30, 2010 - Fri, Jul 2, 2010: Tokyo Inst. of Tech. Ookayama Campus [Thu, Apr 15], Topics: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Thu, Aug 26, 2010 - Fri, Aug 27, 2010: Sapporo Center for Gender Equality [Wed, Jun 9], Topics: Low voltage/low power techniques, novel devices, circuits, and applications

# SECRETARY:
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-mail: HiAniny


Last modified: 2010-04-06 13:05:55


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