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Chair |
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Tamotsu Hashidume (Hokkaido Univ.) |
Vice Chair |
|
Toru Kaji (Toyota Central R&D Labs.) |
Secretary |
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Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.) |
Assistant |
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Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) |
|
|
Chair |
|
Kanji Yasui (Nagaoka Univ. of Tech.) |
Vice Chair |
|
Yasushi Takemura (Yokohama National Univ.) |
Secretary |
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Naoki Oba (NTT), Satoru Noge (Numazu National College of Tech.) |
Assistant |
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Tadayuki Imai (NTT), Katsuya Abe (Shinshu Univ.) |
|
|
Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
Secretary |
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Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.) |
Assistant |
|
Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT) |
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Conference Date |
Thu, May 13, 2010 13:30 - 17:05
Fri, May 14, 2010 10:00 - 14:45 |
Topics |
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) |
Conference Place |
Research Institute for Electronics, Hamamatsu Caumpus, Shizuoka University |
Address |
3-5-1, Jo-hoku, Naka-ku, Hamamatsu-shi, Shizuoka JAPAN. |
Transportation Guide |
http://www.shizuoka.ac.jp/ippan/hamamatsu.html |
Contact Person |
Assoc. Prof. Hiroya Ikeda, Research Institute of Electronics, Shizuoka Univ. |
Thu, May 13 PM 13:30 - 17:05 |
(1) |
13:30-13:55 |
Measurement of Electron Traps in n-GaN on Si (111) Substrates by Deep-Level Transient Spectroscopy |
Arata Watanabe, Takashi Egawa (Nagoya Inst. of Tech.) |
(2) |
13:55-14:20 |
Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates |
Kazuhiro Nagai, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) |
(3) |
14:20-14:45 |
Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure |
Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA) |
(4) |
14:45-15:10 |
Theoretical study on novel Si single-electron refrigerator |
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) |
|
15:10-15:25 |
Break ( 15 min. ) |
(5) |
15:25-15:50 |
Charging phenomena of a single electron in P-doped Si SOI-MOSFETs |
Earfan Hamid, Juli ChaTarido, Sakito Miki, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) |
(6) |
15:50-16:15 |
Single Photon Detection in Single Dot and Multi Dot Channel Phosphorus-Doped SOI-FET |
Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno, Michiharu Tabe (Shiuzoka Univ.) |
(7) |
16:15-16:40 |
Effect of Gravity on the Growth of Alloy Semiconductors Bulk Crystals |
Yasuhiro Hayakawa, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Hisashi Morii, Toru Aoki, Akira Tanaka, Yasunori Okano (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Sci.&Tech.), Yuko Inatomi (JAXA) |
(8) |
16:40-17:05 |
Effect of Temperature on the Formation of ZnS Nanostructures and Properties |
Mani Navaneethan (Shizuoka Univ.), Jayaram Archana, K. D. Nisha (SMR Univ), Mukannan Arivanandhan (Shizuoka Univ.), Suruttaiyaudaiyar Ponnusamy, Chellamuthu Muthamizhchelvan (SMR Univ), Yasuhiro Hayakawa (Shizuoka Univ.) |
Fri, May 14 AM 10:00 - 12:20 |
(9) |
10:00-10:25 |
A step-annealing effect on SrS:Cu films for blue EL elements |
Masaaki Isai, Suguru Kato (Shizuoka Univ.) |
(10) |
10:25-10:50 |
Investigation of deposition condition of LiMn2O4 films prepared by RF magnetron sputtering |
Mitsuhiro Nakamura, Masaaki Isai (Shizuoka Univ.) |
(11) |
10:50-11:15 |
Preparation and evaluation of Ga2O3 oxygen sensors |
Shinya Kayano, Naoya Yamaguchi, Masaaki Isai (Shizuoka Univ.) |
|
11:15-11:30 |
Break ( 15 min. ) |
(12) |
11:30-11:55 |
Preparation of Pt-deposited TiO2 films and evaluation of photocatalystic properties |
Ikuta Nakamura, Tatsuya Ito, Masaaki Isai (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.) |
(13) |
11:55-12:20 |
Study of Large Area CdTe X-ray and γ-ray Imaging Detectors Grown by MOVPE
-- Study of growth condition for high quality CdTe/Si layer -- |
Tatsuhiko Goto, Kitau Egawa, Hirohisa Ogawa, Hisato Doyoshita, Hiroyuki Fukuta, Hiroaki Inuzuka, Tadahiro Tachi, Naoya Fujimura, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Of Tech.) |
Fri, May 14 PM 13:30 - 14:45 |
(14) |
13:30-13:55 |
Intelligent UV sensor composed of GaN-based photodiode and Si-charge transfer type signal processor |
ChangYong Lee, Fumiya Matsuno, Yoshinori Hashimoto, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) |
(15) |
13:55-14:20 |
Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy |
Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.) |
(16) |
14:20-14:45 |
Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure |
Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) |
Announcement for Speakers |
General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
Contact Address |
Koichi Murata(NTT)
TEL:+81-46-240-2871、FAX:+81-46-270-2872
E-: aecl
Hara Naoki (Fujitsu Lab.)
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- : t |
CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
Contact Address |
Satoru Noge (Numazu National College of Technology)
E-: s-ge-ct
Katsuya Abe (Shinshu University)
E-: abens-u |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: HiAniny |
Last modified: 2010-04-06 13:05:55
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