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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

Conference Date Tue, Jan 30, 2018 11:00 - 16:30
Topics  
Conference Place Kikai Shinko Kaikan B3F Kenshuu-1 
Address 3-5-8, Shibakoen, Minato-ku, Tokyo, 105-0011, Japan.
Transportation Guide http://www.jspmi.or.jp/english/about/access.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.

Tue, Jan 30 AM 
11:00 - 16:30
(1) 11:00-11:30 [Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation
Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo)
(2) 11:30-12:00 [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)
  12:00-13:30 Lunch Break ( 90 min. )
(3) 13:30-14:00 [Invited Talk]
Lateral Charge Migration Suppression Technique of 3D-NAND Flash by Vth Nearing
Kyoji Mizoguchi, Shohei Kotaki, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.)
(4) 14:00-14:30 [Invited Talk]
Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas)
  14:30-15:00 Break ( 30 min. )
(5) 15:00-15:30 [Invited Talk]
STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET
Pablo Stoliar (nanoGUNE), Alejandro Schulman, Ai Kitoh, Akihito Sawa, Isao H. Inoue (AIST)
(6) 15:30-16:00 [Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo)
(7) 16:00-16:30  

Announcement for Speakers
Invited TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 


Last modified: 2017-12-04 16:14:46


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