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Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Masahiko Kondo (Osaka Univ.)
Vice Chair Hajime Shoji (Sumitomo Electric Industries)
Secretary Hiroshi Aruga (Mitsubishi Electric), Toshimasa Umezawa (NICT)

Technical Committee on Electron Device (ED) [schedule] [select]
Chair Naoki Hara (Fujitsu Labs.)
Vice Chair Koichi Maezawa (Univ. of Toyama)
Secretary Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Yasushi Takano (Shizuoka Univ.)
Vice Chair Satoru Noge (Numazu National College of Tech.)
Secretary Tomomasa Sato (Kanagawa Univ.), Junichi Kodate (NTT)
Assistant Nobuyuki Iwata (Nihon Univ.), Takashi Sakamoto (NTT)

Conference Date Thu, Nov 27, 2014 10:30 - 17:15
Fri, Nov 28, 2014 09:30 - 16:55
Topics  
Conference Place  
Transportation Guide http://www.osaka-u.ac.jp/ja/access/accessmap.html
Contact
Person
Prof. Masahiko KONDOW
+81-6-6879-7765
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 27 AM 
10:30 - 10:35
  10:30-10:35 Opening Address ( 5 min. )
Thu, Nov 27 PM 
10:35 - 12:15
(1) 10:35-11:00 AlN Single Crystal Growth by means of Sublimation method ED2014-73 CPM2014-130 LQE2014-101 Yosuke Iwasaki, Shunro Nagata, Hidetoshi Akiyama, Keiichiro Nakamura (JFE MINERAL)
(2) 11:00-11:25 Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 ED2014-74 CPM2014-131 LQE2014-102 Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
(3) 11:25-11:50 Critical thickness for phase separation in MOVPE-grown thick InGaN ED2014-75 CPM2014-132 LQE2014-103 Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui)
(4) 11:50-12:15 Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE ED2014-76 CPM2014-133 LQE2014-104 Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO)
  12:15-13:15 Lunch Break ( 60 min. )
Thu, Nov 27 PM 
13:15 - 15:20
(5) 13:15-13:40 Emission characteristics of InGaN-MQW structures on m-plane GaN substrates ED2014-77 CPM2014-134 LQE2014-105 Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.)
(6) 13:40-14:05 Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells ED2014-78 CPM2014-135 LQE2014-106 Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical)
(7) 14:05-14:30 The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED ED2014-79 CPM2014-136 LQE2014-107 Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN)
(8) 14:30-14:55 Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography ED2014-80 CPM2014-137 LQE2014-108 Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.)
(9) 14:55-15:20 Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate ED2014-81 CPM2014-138 LQE2014-109 Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN)
  15:20-15:35 Break ( 15 min. )
Thu, Nov 27 PM 
15:35 - 17:15
(10) 15:35-16:00 Hardness and Young's modulus of InN ED2014-82 CPM2014-139 LQE2014-110 Yasushi Ohkubo, Momoto Deura (Tohoku Univ.), Yuki Tokumoto (Univ. Tokyo), Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga (Tohoku Univ.)
(11) 16:00-16:25 Crystal Growth and Magnetic Property of Cr2O3 Thin Films on LiNbO3 Substrates Takumi Nakamura, Yutaro Hayashi, Takashi Sumida, Kosuke Hashimoto, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
(12) 16:25-16:50 Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties. ED2014-83 CPM2014-140 LQE2014-111 Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
(13) 16:50-17:15 Chiral Structure and Electric Property of Single-Walled Carbon Nanotubes Grown with Free Electron Laser Irradiation Yusaku Tsuda, Keisuke Yoshida, Daiki Kawaguchi, Tomoko Nagata, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.)
Fri, Nov 28 AM 
09:30 - 10:45
(14) 09:30-09:55 Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure ED2014-85 CPM2014-142 LQE2014-113 Wataru Terashima, Hideki Hirayama (RIKEN)
(15) 09:55-10:20 MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz ED2014-84 CPM2014-141 LQE2014-112 Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.)
(16) 10:20-10:45 A hybrid integrated light source on Si platform using a quantum dot laser for high temperature operation ED2014-86 CPM2014-143 LQE2014-114 Nobuaki Hatori, Takanori Shimizu (PETRA), Makoto Okano (National Institute of Advanced Industrial Science AIST), Masashige Ishizaka, Tsuyoshi Yamamoto, Yutaka Urino (PETRA), Masahiko Mori (National Institute of Advanced Industrial Science AIST), Takahiro Nakamura (PETRA), Yasuhiko Arakawa (Univ. of Tokyo)
  10:45-11:00 Break ( 15 min. )
Fri, Nov 28 PM 
11:00 - 12:15
(17) 11:00-11:25 Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating ED2014-87 CPM2014-144 LQE2014-115 Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, Yoshiki Naoi (Univ. of Tokushima)
(18) 11:25-11:50 Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer ED2014-88 CPM2014-145 LQE2014-116 Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN)
(19) 11:50-12:15 Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content ED2014-89 CPM2014-146 LQE2014-117 Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN)
  12:15-13:15 Lunch Break ( 60 min. )
Fri, Nov 28 PM 
13:15 - 14:55
(20) 13:15-13:40 Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films ED2014-90 CPM2014-147 LQE2014-118 Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu)
(21) 13:40-14:05 Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy ED2014-91 CPM2014-148 LQE2014-119 Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara (Univ. of Fukui)
(22) 14:05-14:30 Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias ED2014-92 CPM2014-149 LQE2014-120 Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.)
(23) 14:30-14:55 MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures ED2014-93 CPM2014-150 LQE2014-121 Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.)
  14:55-15:10 Break ( 15 min. )
Fri, Nov 28 PM 
15:10 - 16:55
(24) 15:10-15:35 Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells ED2014-94 CPM2014-151 LQE2014-122 Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.)
(25) 15:35-16:00 Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity ED2014-95 CPM2014-152 LQE2014-123 Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.)
(26) 16:00-16:25 Effects of thermal cleaning on surface of bulk GaN substrates ED2014-96 CPM2014-153 LQE2014-124 Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.)
(27) 16:25-16:50 Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film ED2014-97 CPM2014-154 LQE2014-125 Tomohiro Noma, Hiroaki Hayashi, Daishi Fukushima, Yuta Konno, Ichiro Nomura, Katsumi Kishino (Sophia Univ.)
  16:50-16:55 Closing Address ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Hiroshi Aruga (Mitsubishi Electric)
TEL +81-467-41-2906,FAX +81-467-41-2519
E-: AHiabMibiElectc

Toshikuni Umezawa (NICT)
TEL +81-42-327-7528, FAX +81-42-327-7938
E-: _u 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tetsuzo Ueda(Panasonic)
TEL:+81-6-6906-4940、FAX:+81-6-6906-2426
E-zopac
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E- : irciqei 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  


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