Thu, May 19 AM
09:00 - 10:15 |
| (1) |
09:00-09:25 |
Fabration of CuxS and CuxZnyS thin films by the electrochemical deposition method |
Kai Yang, Yuki Nakashima, Masaya Ichimura (NIT) |
| (2) |
09:25-09:50 |
High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE |
Yuta Takagi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
| (3) |
09:50-10:15 |
Raman Scattering Spectroscopy for Epitaxial AlN films |
Shibo Yang, Reina Miyagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroshi Harima (Kyoto Inst. Tech.) |
| |
10:15-10:25 |
Break ( 10 min. ) |
Thu, May 19
10:25 - 12:05 |
| (4) |
10:25-10:50 |
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers |
Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (5) |
10:50-11:15 |
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer |
Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) |
| (6) |
11:15-11:40 |
Characterization of SiC photoelectrochemical properties for water splitting |
Tomonari Yasuda, Masashi Kato, Masaya Ichimura (NIT) |
| (7) |
11:40-12:05 |
Improvement of n-type 4H-SiC Schottky diode characteristics using passivation of defect by anodic oxidation. |
Masaya Kimura, Masashi Kato, Masaya Ichimura (NIT) |
| |
12:05-13:00 |
Lunch Break ( 55 min. ) |
Thu, May 19
13:00 - 14:40 |
| (8) |
13:00-13:25 |
Lateral overgrowth of GaN by ammonia-based metal-organic molecular beam epitaxy |
Shota Uchiyama, Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka (Meijo Univ.) |
| (9) |
13:25-13:50 |
Growth of InGaN nanowires on a (111)Si substrate by RF-MBE |
Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
| (10) |
13:50-14:15 |
Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate |
Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) |
| (11) |
14:15-14:40 |
Molecular beam epitaxy growth of BGaP |
Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| |
14:40-14:50 |
Break ( 10 min. ) |
Thu, May 19
14:50 - 16:30 |
| (12) |
14:50-15:15 |
Curvature control of substrate by MOVPE growth of GaN with voids |
Sumito Ohuchi, Hideto Miyake, Kazumasa Hiramatsu (mie Univ.) |
| (13) |
15:15-15:40 |
MOVPE growth of thick InGaN on (1-101)GaN/Si |
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) |
| (14) |
15:40-16:05 |
MOCVD growth of GaN on graphite substrates |
Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) |
| (15) |
16:05-16:30 |
Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy |
Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.) |
| |
16:30-16:40 |
Break ( 10 min. ) |
Thu, May 19
16:40 - 17:55 |
| (16) |
16:40-17:05 |
Growth of GaN and AlGaN on B-Ga2O3 (100) substrate |
Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki, Hiroshi Amano (Meijo Univ/Nagoya Univ) |
| (17) |
17:05-17:30 |
MOVPE growth of nitrides analyzed using a novel in situ X-ray diffraction system |
Daiki Tanaka, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) |
| (18) |
17:30-17:55 |
High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates |
Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
Fri, May 20 AM
09:00 - 10:15 |
| (19) |
09:00-09:25 |
High electron mobility InSb film grown by surface reconstruction controlled epitaxy |
Masayuki Mori, Koji Nakayama, Kimihiko Nakatani, Yuichiro Yasui, Koichi Maezawa (Univ. of Toyama) |
| (20) |
09:25-09:50 |
Current path control with Nitride semiconductor-based tunnel junction |
Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
| (21) |
09:50-10:15 |
Fabrication of GaN-based Tunnel Junctions |
Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) |
| |
10:15-10:25 |
Break ( 10 min. ) |
Fri, May 20
10:25 - 12:05 |
| (22) |
10:25-10:50 |
Increase of output power and spectral width of near-infrared small-size light source using glass phosphor |
Shingo Fuchi, Shunichi Kobayashi, Koji Oshima, Yoshikazu Takeda (Nagoya Univ.) |
| (23) |
10:50-11:15 |
High reflective electrode for UV light emitting diodes |
Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Unv.), Hiroshi Amano (Nagoya Univ.) |
| (24) |
11:15-11:40 |
Aging test of AlGaN-based ultraviolet light emitting diodes
-- The Degradation Mechanism of UV-LED -- |
Park Gwi Jin, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Tetsuhiko Inazu, Takehiko Fujita, Cyril Pernot, Akira Hirano (UV Craftory) |
| (25) |
11:40-12:05 |
Internal quantum efficiency of AlGaN multiquantum wells |
Junichi Yamamoto, Kazuhito Ban, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
| |
12:05-13:00 |
Lunch Break ( 55 min. ) |
Fri, May 20
13:00 - 15:05 |
| (26) |
13:00-13:25 |
Development of radiation imaging arrays using thick CdTe layers grown on Si substrates by MOVPE |
Tadahiro Tachi, Hiroaki Inuzuka, Naoya Fujimura, Takaki Kondo, Syuhei Nanba, Shinya Muramatsu, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (NTT) |
| (27) |
13:25-13:50 |
Preparation and evaluation of Ga2O3 ovygen sensors |
Takahiro Yamamoto, Shinya Kayano, Hiroki Ikeda, Yoshifumi Suzuki, Masaaki Isai (Shizuoka Univ.) |
| (28) |
13:50-14:15 |
Stabilized Pt deposition on the TiO2 films and their photocatalytic properties |
Ikuta Nakamura, Takanori Sato, Masaaki Isai (Shizuoka Univ.), Yoichi Hoshi (Tokyo polytech.Univ.) |
| (29) |
14:15-14:40 |
Preparation and evaluation of LiMn2O4 films prepared by sputtering method |
Mitsuhiro Nakamura, Akio Niwa, Masaaki Isai (Shizuoka Univ.) |
| (30) |
14:40-15:05 |
Evaluation of Pt/GaN Schottky barrier diode for CO gas sensor operating in high temperatures |
Daichi Maruyama, Hiroshi Okada, Hiroto Sekiguchi, Akihiro Wakahara (Toyohashi Univ. of Tech) |
| |
15:05-15:15 |
Break ( 10 min. ) |
Fri, May 20 PM
15:15 - 16:30 |
| (31) |
15:15-15:40 |
A tandem photo electrochemical solar cell by SnS and ZnO thin films. |
Shou Hattori, Masaya Ichimura (Nagoya Inst. Technol.) |
| (32) |
15:40-16:05 |
Fabrication of non-polar a-plane nitride based solar cells |
Tatsuro Nakao, Yosuke Kuwahara, Yasuharu Fuziyama, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
| (33) |
16:05-16:30 |
Fabrication of nitride-based solar cells electrode structure |
Shota Yamamoto, Yoshiki Morita, Yosuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
| |
16:30-16:40 |
Break ( 10 min. ) |
Fri, May 20
16:40 - 17:55 |
| (34) |
16:40-17:05 |
Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- |
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) |
| (35) |
17:05-17:30 |
Study on AlInN barrier layer of GaInN channel HFET |
Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Naofumi Horio, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
| (36) |
17:30-17:55 |
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition |
Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) |
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