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=============================================== Technical Committee on Electron Devices (ED) Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba) Secretary: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) Assistant: Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.) =============================================== Technical Committee on Microwaves (MW) Chair: Yohei Ishikawa (Kyoto Univ.) Vice Chair: Takao Kuki (Kokushikan Univ.), Kenjiro Nishikawa (Kagoshima Univ.), Kenichi Tajima (Mitsubishi Electric) Secretary: Junji Sato (Panasonic), Takuichi Hirano (Tokyo Inst. of Tech.) Assistant: Naoto Sekiya (Univ. of Yamanashi), Satoshi Ono (Univ. of Electro-Comm.) DATE: Thu, Jan 26, 2017 14:00 - 16:40 Fri, Jan 27, 2017 09:30 - 15:15 PLACE: TOPICS: Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies ---------------------------------------- Thu, Jan 26 PM (14:00 - 15:15) ---------------------------------------- (1) 14:00 - 14:25 [Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) (2) 14:25 - 14:50 [Invited Lecture] Commercialization of GaN-HEMT for High Frequency Application Yasunori Tateno (Sumitomo Electric) (3) 14:50 - 15:15 [Invited Lecture] Current Status of Millimeter-Wave GaN-HEMTs Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Jan 26 PM (15:25 - 16:40) ---------------------------------------- (4) 15:25 - 15:50 [Invited Lecture] Towards Realization of GaN Vertical Power Devices Jun Suda (Kyoto Univ.) (5) 15:50 - 16:15 [Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices Yohei Otoki (SCIOCS) (6) 16:15 - 16:40 [Invited Lecture] Characterization of Metal/GaN Schottky Contacts -- Review from the Early Days -- Kenji Shiojima (Univ. of Fukui) ---------------------------------------- Fri, Jan 27 AM (09:30 - 10:20) ---------------------------------------- (7) 09:30 - 09:55 Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) (8) 09:55 - 10:20 Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Jan 27 AM (10:30 - 11:45) ---------------------------------------- (9) 10:30 - 10:55 Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator Toshiki Miyazaki, Masataka Ohira, Zhewag Ma, Xiaolong Wang (Saitama Univ.) (10) 10:55 - 11:20 Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators Ru Zhang, Zhewang Ma, Masataka Ohira, Xiaolong Wan (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.) (11) 11:20 - 11:45 An X-band Low Loss/High Power SPST Switch Using GaN on Si Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric) ----- Lunch Break ( 75 min. ) ----- ---------------------------------------- Fri, Jan 27 PM (13:00 - 13:50) ---------------------------------------- (12) 13:00 - 13:25 Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) (13) 13:25 - 13:50 Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Jan 27 PM (14:00 - 15:15) ---------------------------------------- (14) 14:00 - 14:25 A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.) (15) 14:25 - 14:50 C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) (16) 14:50 - 15:15 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Lecture will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter. === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Mon, Jan 30, 2017 - Tue, Jan 31, 2017: Miyajima-Morino-Yado(Hiroshima) [Wed, Nov 16], Topics: Circuit, Device and Engineering Science Fri, Feb 24, 2017: Centennial Hall, Hokkaido Univ. [Fri, Dec 16], Topics: Functional nanodevices and related technologies Thu, Apr 20, 2017 - Fri, Apr 21, 2017: [Fri, Feb 24] # SECRETARY: Koji Matsunaga（NEC) TEL：+81-44-435-8348 FAX：+81-44-455-8253 E-mail： k-      fp   c Toshikazu Suzuki (JAIST) TEL : +81-761-51-1441 Fax : +81-761-51-1455 E-mail :  si  jaist === Technical Committee on Microwaves (MW) === # FUTURE SCHEDULE: Feb, 2017: Recess Thu, Mar 2, 2017 - Fri, Mar 3, 2017: Okayama Prefectural Univ. [Wed, Jan 11], Topics: Microwave Integrated Circuit / Microwave Technologies Fri, Apr 28, 2017: Kikai-Shinko Kaikan, B2-1 [Fri, Feb 17], Topics: Wireless Power Transfer / microwave, general # SECRETARY: Naoto Sekiya (Yamanashi Univ.) TEL: +81-55-220-8393 E-mail: n     or Junji Sato (Panasonic) TEL: +81-50-3686-6073, FAX: +81-45-934-8765 E-mail:  ujun pa  cLast modified: 2017-01-26 10:35:23 |
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