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| Chair |
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Kiyoshi Ishii |
| Vice Chair |
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Kiichi Kamimura |
| Secretary |
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Toru Matsuura, Seiji Toyoda |
| Assistant |
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Hidehiko Shimizu, Yasushi Takemura |
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| Conference Date |
Mon, Aug 7, 2006 13:30 - 17:05
Tue, Aug 8, 2006 09:30 - 12:40 |
| Topics |
Electronic Component Parts and Materials, etc. |
| Conference Place |
Faculty of Engineering, Iwate University |
| Address |
4-3-5, Ueda, Morioka, Iwate 020-8550 JAPAN |
| Transportation Guide |
http://www.iwate-u.ac.jp/english/campusmap/index.html |
Contact
Person |
Faculty of Engineering, Iwate University, Prof. Osamu Michikami
019-621-6386 |
Mon, Aug 7 PM
13:30 - 17:05 |
| (1) |
13:30-13:55 |
Ga content dependence of properties of ZnO:Ga thin film prepared on glass substrate by rf magnetron sputtering |
Norimitu Nasu, Hiroaki Hasebe, Kouichi Mutou, Shinji Kikuchi, Osamu Michikami (Iwate Univ.) |
| (2) |
13:55-14:20 |
Growth of Ga doped ZnO films by RF sputterring in ambient Ar+H2 |
Kouichi Mutou, Norimitu Nasu, Hiroaki Hasebe, Osamu Michikami (Iwate Univ.) |
| (3) |
14:20-14:45 |
ZnO thin film growth on Si(100) by MOCVD |
Hisao Wajima, Fumihiko Hirose (Yamagata Univ.) |
| (4) |
14:45-15:10 |
Preparation and consideration of ZnO Thin Films Deposited by Sputter-Beam Deposition Method |
Toru Noguchi, Ayumu Kawakami, Akiyuki Higashide, Hidehiko Shimizu, Takeo Maruyama, Haruo Iwano, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (T.P.U.) |
| |
15:10-15:25 |
Break ( 15 min. ) |
| (5) |
15:25-15:50 |
Low temperature deposition of anatase poly TiO2 by chemical vapor deposition |
Fumihiko Hirose, Masashi Ito, Yu Matsushima (YU) |
| (6) |
15:50-16:15 |
High Rate deposition of TiO2 thin films by plasma assisted electron beam evaporation |
Yoichi Hoshi, Ｓｈｉｇｅｔｏｓｈｉ Ｋａｗａｇｕｃｈｉ, Osamu Kamiya (Ｔｏｋｙｏ Ｐｏｌｙｔｅｃｈｎｉｃ Ｕｎｉｖ．), Hidehiko Shimizu (Ｎｉｉｇａｔａ Ｕｎｉｖ．) |
| (7) |
16:15-16:40 |
Low temperature epitaxial growth of 3C-SiC on SOI substrate using Hot-Mesh CVD method |
Hitoshi Miura, Taishi Kurimoto, Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech.) |
| (8) |
16:40-17:05 |
Growth of GaN on SiC/Si(111) substrates using AlN buffer layer by hot-mesh CVD method |
Kazuyuki Tamura, Yusuke Fukada, Yuichiro Kuroki, Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. of Tech) |
Tue, Aug 8 AM
09:30 - 12:40 |
| (9) |
09:30-09:55 |
EuBa2Cu3O7-δ薄膜用CeO2バッファ層の厚膜化 |
Keita Kikuchi, Jun Sakuma, Satosi Husiwara, Yasuyuki Ota, Osamu Michikami (Iwate Univ.) |
| (10) |
09:55-10:20 |
The control of the surface morphology of thick CeO2 buffer layer prepared by magnetron sputtering |
Yasuyuki Ota, Jun Sakuma, Yutaka Kimura, Hiroshi Mashiko, Osamu Michikami (Iwate Univ.) |
| (11) |
10:20-10:45 |
Superconducting properties of EuBa2Cu3O7-d thin films grown on thick Sm2O3 buffer layers |
Yutaka Kimura, Yasuyuki Ota, Yuya Unuma, Osamu Michikami (Iwate Univ.) |
| (12) |
10:45-11:10 |
The effect of heat treatment on a large sized superconducting thin film using the facing targets magnetron suputtering method |
Shingo Musashi, Iori Hayasaka, Kouya Takahashi, Osamu Michikami (Iwate Univ) |
| |
11:10-11:25 |
Break ( 15 min. ) |
| (13) |
11:25-11:50 |
Deposition of Large-area SmBa2Cu3O7-δ films by Magnetron Sputtering with Facing Targets |
Koya Takahashi, Shingo Musashi, Yutaka Kimura, Shinji Kikuchi, Osamu Michikami (Iwate Univ.) |
| (14) |
11:50-12:15 |
Electro-magnetic Wave Absorption Characteristics due to Structure of the Powder-Type Magnetic Wood（4） |
Koji Sato, Hideo Oka (Iwate Univ.), Yasuji Namizaki (Iwate Industrial Research Insti.) |
| (15) |
12:15-12:40 |
A bowl-shaped left handed material lens |
Takakazu Yonezawa, Masahiro Daibo, Norio Tayama (Iwate Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
Hidehiko Shimizu (Niigata University)
TEL 025-262-6811, FAX 025-262-6811
E- :     eng  i  -u
Osamu Michikami (Iwate University)
TEL 019-621-6386, FAX 019-621-6393
E-:   mi  -u |
Last modified: 2006-05-30 18:52:58
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