Thu, Nov 12 AM 10:00 - 16:20 |
|
10:00-10:10 |
Introductory talk ( 10 min. ) |
(1) |
10:10-11:00 |
[Invited Talk]
Low power 3D system integration by inductive coupling communications and its perspective[invited] |
Tadahiro Kuroda (Keio Univ.) |
(2) |
11:00-11:50 |
[Invited Talk]
Compact MOSFET Model and Its Perspective
-- from bulk-MOSFET to MG-MOSFET -- |
Mitiko Miura-Mattausch, Masataka Miyake, Koh Johguchi, Shunta Kusu, Kenta Ishimura, Hideyuki Kikuchihara, Feldmann Uwe, Mattausch Hans Juergen (Hiroshima Univ.) |
|
11:50-13:00 |
Lunch ( 70 min. ) |
(3) |
13:00-13:40 |
[Invited Talk]
2009 SISPAD Review |
Katsuhiko Tanaka (MIRAI-Selete) |
(4) |
13:40-14:20 |
[Invited Talk]
Report on 2009 SISPAD (2) |
Matsuto Ogawa (Kobe Univ.) |
|
14:20-14:40 |
Break ( 20 min. ) |
(5) |
14:40-15:05 |
Surface-Potential-Based Drain Current Model for Thin-Film Transistors |
Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) |
(6) |
15:05-15:30 |
HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation |
Masataka Miyake, Hiroki Masuoka, Uwe Feldmann, Mitiko Miura-Mattausch (Hiroshima Univ.) |
(7) |
15:30-15:55 |
Development of MEMS and Equivalent Circuit Generator |
Nobuyo Fujiwara, Kazuo Asaumi (Mizuho Information & Research Institute), Tomoyuki Koike (Micromachine Center), Toshiyuki Tsuchiya (Kyoto Univ,), Gen Hashiguchi (Shizuoka Univ.) |
(8) |
15:55-16:20 |
Device Modeling and Simulation for CMOS Biosensor Applications |
Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) |
Fri, Nov 13 AM 10:00 - 16:15 |
(9) |
10:00-10:25 |
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors |
Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.) |
(10) |
10:25-10:50 |
R-matrix method for quantum transport simulation in atomistic modeling |
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST) |
(11) |
10:50-11:15 |
Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation |
Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) |
(12) |
11:15-11:40 |
A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects |
Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) |
|
11:40-13:00 |
Lunch ( 80 min. ) |
(13) |
13:00-13:50 |
[Tutorial Invited Lecture]
Possible Performance of SOI Devices, their Potentiality and Prospects
-- Past Constraint and Current Issues -- |
Yasuhisa Omura (Kansai Univ.) |
(14) |
13:50-14:40 |
[Invited Talk]
Random Fluctuations in Scaled MOS Devices |
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) |
|
14:40-15:00 |
Break ( 20 min. ) |
(15) |
15:00-15:25 |
A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation |
Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete) |
(16) |
15:25-15:50 |
Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface |
Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) |
(17) |
15:50-16:15 |
Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network |
Kenji Kawabata, Takashi Ichikawa, Hiroshi Watanabe (Toshiba Corp.) |