ken-system: Advance Program - 2010-11-CPM-LQE-ED

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Technical Committee on Component Parts and Materials (CPM)
Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Vice Chair: Yasushi Takemura (Yokohama National Univ.)
Secretary: Tadayuki Imai (NTT), Satoru Noge (Numazu National College of Tech.)
Assistant: Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.)

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Technical Committee on Lasers and Quantum Electronics (LQE)
Chair: Hitoshi Kawaguchi (NAIST) Vice Chair: Tsukuru Katsuyama (Sumitomo Electric Industries)
Secretary: Kenji Sato (NEC), Tomoyuki Miyamoto (Tokyo Inst. of Tech.)

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Technical Committee on Electron Device (ED)
Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Tetsu Kachi (Toyota Central R&D Labs.)
Secretary: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)
Assistant: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)

DATE:
Thu, Nov 11, 2010 10:00 - 17:15
Fri, Nov 12, 2010 10:00 - 17:00

PLACE:
Osaka Univ. Nakanoshima Center(4-3-53 Nakanoshima, Kita-ku, Osaka-shi, 530-0005 Japan. http://www.onc.osaka-u.ac.jp/others/map/index.php. Dr. T. Ueda, Panasonic. +81-6-6444-21)

TOPICS:

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Thu, Nov 11 AM (10:00 - 11:40)
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(1) 10:00 - 10:25
Optical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Hitoshi Miura, Takashi Otani, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagaoka Univ. Technol.)

(2) 10:25 - 10:50
Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE
Tsutomu Araki, Keisuke Kawashima, Tomohiro Yamaguchi, Yasushi Nanishi (Ritsumeikan Univ.)

(3) 10:50 - 11:15
GaN growth on pseudo (111)Al substrates by RF-MBE
Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.)

(4) 11:15 - 11:40
Growth characteristics of GaNP layer and InAs-based QDs on Si substrate
Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Kosuke Nemoto, Tomoyuki Miyamoto (Tokyo Inst. of Tech.)

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Thu, Nov 11 PM (13:00 - 17:15)
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(5) 13:00 - 13:25
AlN growth on SiC by LP-HVPE
Kenta Okumura, Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Osamu Eryu (NIT)

(6) 13:25 - 13:50
ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE
Kohei Fujita, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken)

(7) 13:50 - 14:15
Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation
Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HPK)

----- Break ( 15 min. ) -----

(8) 14:30 - 14:55
A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells
Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.)

(9) 14:55 - 15:20
Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy
-- Efficiency droop mechanism assessed by SNOM --
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)

(10) 15:20 - 15:45
100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping
Takao Oto, Ryan G. Banal (Kyoto Univ.), Ken Kataoka (Ushio Inc.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)

(11) 15:45 - 16:10
High Efficiency AlInN Ultraviolet Photodiodes on AlN Template
Yusuke Sakai, Junki Ichikawa, Takashi Egawa (Nagoya Inst. of Tech.)

----- Break ( 15 min. ) -----

(12) 16:25 - 16:50
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)

(13) 16:50 - 17:15
High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.)

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Fri, Nov 12 AM (10:00 - 11:40)
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(14) 10:00 - 10:25
Characterization of insulated gates on GaN and AlGaN/GaN structures
Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.)

(15) 10:25 - 10:50
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.)

(16) 10:50 - 11:15
Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.)

(17) 11:15 - 11:40
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI)

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Fri, Nov 12 PM (13:00 - 17:00)
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[Panel Session] GaN Power Devices
Chair:T. Hasizume (Hokkaido Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Mon, Nov 29, 2010 - Wed, Dec 1, 2010: Kyushu University [Fri, Sep 10], Topics: Design Gaia 2010 ―New Field of VLSI Design―
Thu, Feb 10, 2011: Kikai-Shinko-Kaikan Bldg. [Mon, Dec 13]

=== Technical Committee on Lasers and Quantum Electronics (LQE) ===
# FUTURE SCHEDULE:

Fri, Dec 17, 2010: Kikai-Shinko-Kaikan Bldg. [Fri, Oct 15]
Thu, Jan 27, 2011 - Fri, Jan 28, 2011: Osaka Univ. [Mon, Nov 15]

# SECRETARY:
Kenji Sato (NEC Corp.)
TEL +81-44-431-7616, FAX +81-44-431-7619
E-mail: s

Tomoyuki Miyamoto (Tokyo Institute of Technology)
TEL +81-45-924-5059, FAX +81-45-924-5977
E-mail: t

# ANNOUNCEMENT:
# Homepage of LQE is http://www.ieice.org/~lqe/jpn/

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Dec 16, 2010 - Fri, Dec 17, 2010: Tohoku University (Research Institute of Electrical Communication) [Sun, Oct 24], Topics: Millimeter wave, terahertz devices and systems
Thu, Jan 13, 2011 - Fri, Jan 14, 2011: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 11], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies
Wed, Feb 23, 2011 - Thu, Feb 24, 2011: Hokkaido Univ. [Wed, Dec 8], Topics: Functional nanodevices and related technologies

# SECRETARY:
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E-mail :