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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant: Katsunori Onishi (Kyushu Inst. of Tech.)

DATE:
Fri, Jun 19, 2009 09:30 - 18:05

PLACE:
Komaba Research Campus, The Univ. of Tokyo(4-6-1 KOMABA MEGURO-KU, TOKYO 153-8505, JAPAN. http://www.iis.u-tokyo.ac.jp/index_e.html. Prof. Hiroshi Fujioka. +81-3-5452-6342)

TOPICS:
Science and Technology for Dielectric Thin Films for MIS Devices

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Fri, Jun 19 AM (09:30 - 11:50)
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----- Opening Address ( 5 min. ) -----

(1) 09:30 - 10:00
Material properties of Ge - Comparison with Silicon
Kohei M. Itoh (Keio Univ.)

(2) 10:00 - 10:20
Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface --
Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.)

(3) 10:20 - 10:40
First-Principles Calculations for Interfacial Reaction during Si Oxidation
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.)

----- Break ( 10 min. ) -----

(4) 10:50 - 11:20
Fundamental Study on GeO2/Ge Interface and its Electrical Properties
Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.)

(5) 11:20 - 11:50
Electrical Properties of Ge MIS Interface Defects
Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo)

----- Lunch Break ( 50 min. ) -----

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Fri, Jun 19 PM (12:40 - 16:40)
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(6) 12:40 - 13:00
Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption --
Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA)

(7) 13:00 - 13:20
Fermi Level Pinning at Metal/Germanium Interface and its Controllability
Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST)

(8) 13:20 - 13:40
Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.)

(9) 13:40 - 14:00
Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical
Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)

----- Break ( 10 min. ) -----

(10) 14:10 - 14:30
Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate --
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.)

(11) 14:30 - 14:50
Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes
Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)

(12) 14:50 - 15:10
Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge
Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.)

(13) 15:10 - 15:30
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete)

----- Break ( 10 min. ) -----

(14) 15:40 - 16:00
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition
Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.)

(15) 16:00 - 16:20
Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric
Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST)

(16) 16:20 - 16:40
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3.
Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.)

----- Break ( 10 min. ) -----

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Fri, Jun 19 PM (16:50 - 17:05)
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(17) 16:50 - 16:55
Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx
Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)

(18) 16:55 - 17:00
Theoretical investigation about electronic structure of doping metal silicide
Shinichi Sotome, Takashi Nakayama (Chiba Univ)

(19) 17:00 - 17:05
Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface
Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University)

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Fri, Jun 19 PM (17:05 - 18:05)
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----- Banquet ( 90 min. ) -----



=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Wed, Jun 24, 2009 - Fri, Jun 26, 2009: Haeundae Grand Hotel, Busan, Korea [Fri, Apr 10], Topics: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Thu, Jul 16, 2009 - Fri, Jul 17, 2009: Tokyo Institute of Technology [Wed, May 13], Topics: Low voltage/low power techniques, novel devices, circuits, and applications

# SECRETARY:
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-mail geba


Last modified: 2009-04-27 21:16:32


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