| 講演抄録／キーワード |
| 講演名 |
RF Measurement of Steep Subthreshold Slope "PN-Body Tied SOI FET"
○Mitsuhiro Yuizono・Jiro Ida・Takayuki Mori（Kanazawa Inst of Tech） エレソ技報アーカイブはこちら |
| 抄録 |
（和） |
RF measured data of super steep subthreshold slope "PN-Body Tied (PNBT) SOI-FET" was obtained for the first time. The test devices which has GSG pad layout were prepared and S-parameters were measured with Vector network analyzer. The S21 and the calculated Ft, Fmax change with applying the body bias on the PNBT SOI-FET, which indicates specific characteristics of PNBT SOI-FET. The value of Ft and Fmax with PNBT SOI-FET is degraded, compared with the conventional SOI-FET. It is reasonable when the layout of both FETs are compared. |
| （英） |
RF measured data of super steep subthreshold slope "PN-Body Tied (PNBT) SOI-FET" was obtained for the first time. The test devices which has GSG pad layout were prepared and S-parameters were measured with Vector network analyzer. The S21 and the calculated Ft, Fmax change with applying the body bias on the PNBT SOI-FET, which indicates specific characteristics of PNBT SOI-FET. The value of Ft and Fmax with PNBT SOI-FET is degraded, compared with the conventional SOI-FET. It is reasonable when the layout of both FETs are compared. |
| キーワード |
（和） |
Steep / subthreshold slope / SOI / S-parameters / / / / |
| （英） |
Steep / subthreshold slope / SOI / S-parameters / / / / |
| 文献情報 |
信学技報 |
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