講演抄録/キーワード |
講演名 |
Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting ○Takuya Yamada・Jiro Ida・Takayuki Mori・Shun Momose・Yasunori Tsuchiya・Kenji Itoh(KIT)・Koichiro Ishibashi(UEC) エレソ技報アーカイブはこちら |
抄録 |
(和) |
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the super steep subthreshold slope “PN-body Tied SOI FET” (PNBT). We made the setup of rectification measurements, composed of the signal generator, resistor, oscilloscope and the test device. The half wave rectification was confirmed with the MOS diode by PNBT, even when the input voltage amplitude of the sinewave is 0.10V. It comes from the sharp turn-on characteristics of PNBT. It is promising for small voltage rectification on RF energy harvesting. |
(英) |
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the super steep subthreshold slope “PN-body Tied SOI FET” (PNBT). We made the setup of rectification measurements, composed of the signal generator, resistor, oscilloscope and the test device. The half wave rectification was confirmed with the MOS diode by PNBT, even when the input voltage amplitude of the sinewave is 0.10V. It comes from the sharp turn-on characteristics of PNBT. It is promising for small voltage rectification on RF energy harvesting. |
キーワード |
(和) |
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(英) |
RF energy harvesting / Steep slope device / SOI / / / / / |
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