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Presentation
A Microwave High Power Rectifier Using GaAs pHENT Schottky Diode
Fei Cheng, Ping Lu, Bing Zhang, Kama Huang (Sichuan Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a microwave high power rectifier using GaAs pHENT Schottky diode is proposed. Series single diode topology is employed in the rectifier design. In order to improve the rectifier power handling ability, 64 fingers are adopted in the designed Schottky diode. The fabricated rectifier working at 5.8 GHz has a maximum RF-to-dc conversion efficiency of 59.59% at an input power level of 26.43 dBm and a 587 Ω load. Moreover, taking advantage of the high power GaAs diode, the measured rectifier power handling ability is more than 37 dBm.
Keyword (in Japanese) (See Japanese page) 
(in English) High Power / Rectifier / GaAs Schottky Diode / / / / /  
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Conference Information
Committee WPT  
Conference Date 2019-10-31 - 2019-11-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Xidian University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2019 Asian Wireless Power Transfer Workshop (AWPT 2019) 
Paper Information
Registration To WPT 
Conference Code 2019-10-WPT 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Microwave High Power Rectifier Using GaAs pHENT Schottky Diode 
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Keyword(1) High Power  
Keyword(2) Rectifier  
Keyword(3) GaAs Schottky Diode  
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1st Author's Name Fei Cheng  
1st Author's Affiliation Sichuan University (Sichuan Univ.)
2nd Author's Name Ping Lu  
2nd Author's Affiliation Sichuan University (Sichuan Univ.)
3rd Author's Name Bing Zhang  
3rd Author's Affiliation Sichuan University (Sichuan Univ.)
4th Author's Name Kama Huang  
4th Author's Affiliation Sichuan University (Sichuan Univ.)
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