The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET connected diode, based on the extracted parameters from the MOS diode by the fabricated SOI MOSFET. The efficiency will reach to be 30% at the input power of -30dBm with Hi-Z antenna of 10KΩ. The reduction on the parasitic capacitance of the circuit is important, especially when using the high impedance value on Hi-Z antenna and the high frequency. The SOI technology will be promising when designing the high efficiency rectenna with Hi-Z antenna.
（英）
The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET connected diode, based on the extracted parameters from the MOS diode by the fabricated SOI MOSFET. The efficiency will reach to be 30% at the input power of -30dBm with Hi-Z antenna of 10KΩ. The reduction on the parasitic capacitance of the circuit is important, especially when using the high impedance value on Hi-Z antenna and the high frequency. The SOI technology will be promising when designing the high efficiency rectenna with Hi-Z antenna.