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| Presentation | 2022-08-04 14:45 Growth and properties of BaTiO3 on GGG substrate with buffer layer(s) Ryu Hasumi, Natsuki Kono, Yuichi Nakamura (TUT)  CPM2022-12 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In our laboratory, we have been working to realize magneto-optical spatial light modulators (MOSLMs) with multiferroic composite films, in which Bi-substituted rare earth iron garnets (Bi:RIG) and piezo-electric materials are grown simultaneously on GGG substrates, where piezoelectric materials are formed on buffer layers. In this study, BaTiO3 (BTO) was grown on a buffer layer formed on a GGG (111) substrate, and the results of evaluation were investigated. CoFe2O4 (CFO) and NiFe2O4 (NFO) were deposited on the buffer layer, and different ratios of NFO were used for comparison. As a result, the pole figure analysis showed that the (111) aligned BTO film with multiple in-plane rotated domains grew on the buffer layer , and the degree of in-plane rotation may be affected by the thickness of the NFO. For dielectric properties, the saturation polarization Pc was found to increase with increasing NFO ratio. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | BaTiO3 / buffer layer / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 147, CPM2022-12, pp. 3-6, Aug. 2022. | |
| Paper # | CPM2022-12 | |
| Date of Issue | 2022-07-28 (CPM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2022-12 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2022-08-04 - 2022-08-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2022-08-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and properties of BaTiO3 on GGG substrate with buffer layer(s) |
| Sub Title (in English) | |
| Keyword(1) | BaTiO3 |
| Keyword(2) | buffer layer |
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| 1st Author's Name | Ryu Hasumi |
| 1st Author's Affiliation | Toyohashi University of Technology (TUT) |
| 2nd Author's Name | Natsuki Kono |
| 2nd Author's Affiliation | Toyohashi University of Technology (TUT) |
| 3rd Author's Name | Yuichi Nakamura |
| 3rd Author's Affiliation | Toyohashi University of Technology (TUT) |
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| Speaker | Author-1 |
| Date Time | 2022-08-04 14:45:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2022-12 |
| Volume (vol) | vol.122 |
| Number (no) | no.147 |
| Page | pp.3-6 |
| #Pages | 4 |
| Date of Issue | 2022-07-28 (CPM) |
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