Paper Abstract and Keywords |
Presentation |
2022-05-27 14:40
Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effective for fabricating Si photonics devices such as an optical multiplexer/demultiplexer with a thermally stable operation. A low-loss optical waveguide is reported using a SiNx film deposited by reactive sputtering at a relatively low deposition temperature of 200ºC. An AlN film with a refractive index as large as 2.0, similar to SiNx, is also deposited by reactive sputtering. No electro-optic effect is present in SiNx, while AlN ideally possesses an electro-optic coefficient on the order of 0.1 pm/V, potentially realizing optical modulation/switching devices including an optical intensity modulator. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon photonics / Reactive sputtering / Low-Temperature deposition / Silicon nitride / Aluminum nitride / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 54, SDM2022-17, pp. 13-16, May 2022. |
Paper # |
SDM2022-17 |
Date of Issue |
2022-05-20 (ED, CPM, SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2022-10 CPM2022-4 SDM2022-17 |
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