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| Presentation | 2022-01-27 15:30 [Invited Lecture] A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique Ryo Ishikawa, Takuya Seshimo, Yoichiro Takayama, Kazuhiko Honjo (UEC)  ED2021-67 MW2021-109 Link to ES Tech. Rep. Archives: ED2021-67 MW2021-109 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In the 5G wireless communication system, a quasi-millimeter wave band such as the 28 GHz band is also used. Doherty power amplifiers are also used as a wide dynamic range power amplifier in the quasi-millimeter wave band. However, it is difficult to designed ideally due to transistor performance degradation and circuit insertion loss increase. On the other hand, impedance optimization design is possible for MMIC amplifiers by design accuracy of a circuit simulator. Therefore, we have established a design algorithm based on the Doherty amplifier configuration that does not use the λ/4 impedance converter. The fabricated 28 GHz band GaN HEMT MMIC Doherty amplifier based on the design algorithm exhibited a drain efficiency of 54% and a power-added efficiency (PAE) of 44% at 29.1 GHz, with a saturation output power of 30 dBm. In addition, a PAE of 25% was achieved at 29.1 GHz on a 9-dB output back-off condition. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Doherty power amplifier / quasi-millimeter wave band / GaN HEMT MMIC / 5 G / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 361, MW2021-109, pp. 28-31, Jan. 2022. | |
| Paper # | MW2021-109 | |
| Date of Issue | 2022-01-20 (ED, MW) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2021-67 MW2021-109 Link to ES Tech. Rep. Archives: ED2021-67 MW2021-109 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2022-01-27 - 2022-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2022-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique |
| Sub Title (in English) | |
| Keyword(1) | Doherty power amplifier |
| Keyword(2) | quasi-millimeter wave band |
| Keyword(3) | GaN HEMT MMIC |
| Keyword(4) | 5 G |
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| 1st Author's Name | Ryo Ishikawa |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Takuya Seshimo |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Yoichiro Takayama |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
| 4th Author's Name | Kazuhiko Honjo |
| 4th Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2022-01-27 15:30:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2021-67, MW2021-109 |
| Volume (vol) | vol.121 |
| Number (no) | no.360(ED), no.361(MW) |
| Page | pp.28-31 |
| #Pages | 4 |
| Date of Issue | 2022-01-20 (ED, MW) |
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