Paper Abstract and Keywords |
Presentation |
2021-12-09 14:45
Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 Link to ES Tech. Rep. Archives: ED2021-45 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) film to improve its oxidation resistance. h-BN is a suitable material for GOS device protection because of its high oxidation resistance and high electron transmissivity. The GOS device covered by monolayer h-BN emitted electrons even after the oxygen plasma exposure for four minutes, indicating that the oxygen resistance of the GOS device was successfully improved by monolayer h-BN protection film. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Graphene-Oxide-Semiconductor / Graphene / Hexagonal Boron Nitride / Low Earth Orbit / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 290, ED2021-45, pp. 38-42, Dec. 2021. |
Paper # |
ED2021-45 |
Date of Issue |
2021-12-02 (ED) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2021-45 Link to ES Tech. Rep. Archives: ED2021-45 |
Conference Information |
Committee |
ED |
Conference Date |
2021-12-09 - 2021-12-09 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2021-12-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications |
Sub Title (in English) |
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Keyword(1) |
Graphene-Oxide-Semiconductor |
Keyword(2) |
Graphene |
Keyword(3) |
Hexagonal Boron Nitride |
Keyword(4) |
Low Earth Orbit |
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1st Author's Name |
Naoyuki Matsumoto |
1st Author's Affiliation |
Yokohama National University/National Institute of Advanced Industrial Science and Technology (YNU/AIST) |
2nd Author's Name |
Yoshinori Takao |
2nd Author's Affiliation |
Yokohama National University (YNU) |
3rd Author's Name |
Masayoshi Nagao |
3rd Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
4th Author's Name |
Katsuhisa Murakami |
4th Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
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Speaker |
Author-1 |
Date Time |
2021-12-09 14:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2021-45 |
Volume (vol) |
vol.121 |
Number (no) |
no.290 |
Page |
pp.38-42 |
#Pages |
5 |
Date of Issue |
2021-12-02 (ED) |