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| Presentation | 2021-11-26 15:20 Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.)  ED2021-33 CPM2021-67 LQE2021-45 Link to ES Tech. Rep. Archives: ED2021-33 CPM2021-67 LQE2021-45 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | $Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-dislocation-density AlN templates prepared by a combination of sputtering and high-temperature annealing using the MOVPE method, and the effect of channel thickness on HEMT properties was investigated. Both the surface flatness and crystallinity of the HEMT structure decreased with increasing channel thickness, while the sheet carrier concentration and Hall mobility increased with increasing channel thickness up to 500 nm, and then began to decrease. The I-V characteristics of HEMT with a channel thickness of 500 nm indicated a saturation current density of 7.6 mA/mm, and the off-state characteristics exhibited a breakdown voltage of 1 kV with drain-source length of 20 $mu$m. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN / MOVPE / 2DEG / Electron mobility / AlGaN channel / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 259, ED2021-33, pp. 83-86, Nov. 2021. | |
| Paper # | ED2021-33 | |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2021-33 CPM2021-67 LQE2021-45 Link to ES Tech. Rep. Archives: ED2021-33 CPM2021-67 LQE2021-45 |
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| Conference Information | |
| Committee | ED CPM LQE |
| Conference Date | 2021-11-25 - 2021-11-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2021-11-ED-CPM-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | MOVPE |
| Keyword(3) | 2DEG |
| Keyword(4) | Electron mobility |
| Keyword(5) | AlGaN channel |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryuichi Mori |
| 1st Author's Affiliation | Mie University (Mie Univ.) |
| 2nd Author's Name | Kenjiro Uesugi |
| 2nd Author's Affiliation | Mie University (Mie Univ.) |
| 3rd Author's Name | Shegeyuki Kuboya |
| 3rd Author's Affiliation | Mie University (Mie Univ.) |
| 4th Author's Name | Kanako Shojiki |
| 4th Author's Affiliation | Mie University (Mie Univ.) |
| 5th Author's Name | Hideto Miyake |
| 5th Author's Affiliation | Mie University (Mie Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-11-26 15:20:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2021-33, CPM2021-67, LQE2021-45 |
| Volume (vol) | vol.121 |
| Number (no) | no.259(ED), no.260(CPM), no.261(LQE) |
| Page | pp.83-86 |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
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