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| Presentation | 2021-11-26 14:55 High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT)  ED2021-32 CPM2021-66 LQE2021-44 Link to ES Tech. Rep. Archives: ED2021-32 CPM2021-66 LQE2021-44 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer. From this, we understand that dual AlN/AlGaInN barrier layers are effective to suppress gate leakage currents and stabilize off-state characteristics for high-AlN-mole-fraction AlGaN-channel HFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Group-III nitrides / AlGaN / HFET / GaN-channel HEMT / High breakdown voltage / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 259, ED2021-32, pp. 79-82, Nov. 2021. | |
| Paper # | ED2021-32 | |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2021-32 CPM2021-66 LQE2021-44 Link to ES Tech. Rep. Archives: ED2021-32 CPM2021-66 LQE2021-44 |
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| Conference Information | |
| Committee | ED CPM LQE |
| Conference Date | 2021-11-25 - 2021-11-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2021-11-ED-CPM-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer |
| Sub Title (in English) | |
| Keyword(1) | Group-III nitrides |
| Keyword(2) | AlGaN |
| Keyword(3) | HFET |
| Keyword(4) | GaN-channel HEMT |
| Keyword(5) | High breakdown voltage |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akiyoshi Inoue |
| 1st Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 2nd Author's Name | Sakura Tanaka |
| 2nd Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 4th Author's Name | Makoto Miyoshi |
| 4th Author's Affiliation | Nagoya Institute of Technology (NIT) |
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| Speaker | Author-1 |
| Date Time | 2021-11-26 14:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2021-32, CPM2021-66, LQE2021-44 |
| Volume (vol) | vol.121 |
| Number (no) | no.259(ED), no.260(CPM), no.261(LQE) |
| Page | pp.79-82 |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
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