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Paper Abstract and Keywords
Presentation 2021-11-26 13:25
Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy
Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 Link to ES Tech. Rep. Archives: ED2021-29 CPM2021-63 LQE2021-41
Abstract (in Japanese) (See Japanese page) 
(in English) Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning internal photoemission microscopy (SIPM). First, we performed SIPM measurement without scanning a laser beam to characterize stability of this measurement system, and revealed the energy resolution of Schottky barrier height (q$phi$B) was less than 0.2 meV. Then, SIPM measurement was performed by scanning a laser beam in the electrodes of three kinds of Schottky contacts. Standard deviations of q$phi$B were 0.84, 3.22, and 5.11 meV, respectively. These values were more than four times larger than that in the fix-pointed measurement. Therefore, we demonstrated that this measurement has sufficient accuracy to characterize the uniformity of these Schottky contacts. In addition, we found that these Schottky contacts exhibit a standard deviation of q$phi$B below 10 meV.
Keyword (in Japanese) (See Japanese page) 
(in English) Schottky contacts / SiC / GaN / α-Ga2O3 / scanning internal photoemission microscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 259, ED2021-29, pp. 67-70, Nov. 2021.
Paper # ED2021-29 
Date of Issue 2021-11-18 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
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Download PDF ED2021-29 CPM2021-63 LQE2021-41 Link to ES Tech. Rep. Archives: ED2021-29 CPM2021-63 LQE2021-41

Conference Information
Committee ED CPM LQE  
Conference Date 2021-11-25 - 2021-11-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2021-11-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy 
Sub Title (in English)  
Keyword(1) Schottky contacts  
Keyword(2) SiC  
Keyword(3) GaN  
Keyword(4) α-Ga2O3  
Keyword(5) scanning internal photoemission microscopy  
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Keyword(7)  
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1st Author's Name Yuto Kawasumi  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Fumimasa Horikiri  
2nd Author's Affiliation SCIOCS Co. (SCIOCS Co.)
3rd Author's Name Noboru Fukuhara  
3rd Author's Affiliation SCIOCS Co. (SCIOCS Co.)
4th Author's Name Tomoyoshi Mishima  
4th Author's Affiliation Hosei University (Hosei Univ.)
5th Author's Name Takashi Shinohe  
5th Author's Affiliation FLOSFIA INC. (FLOSFIA INC.)
6th Author's Name Kenji Shiojima  
6th Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2021-11-26 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2021-29, CPM2021-63, LQE2021-41 
Volume (vol) vol.121 
Number (no) no.259(ED), no.260(CPM), no.261(LQE) 
Page pp.67-70 
#Pages
Date of Issue 2021-11-18 (ED, CPM, LQE) 


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