Paper Abstract and Keywords |
Presentation |
2021-11-26 13:25
Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 Link to ES Tech. Rep. Archives: ED2021-29 CPM2021-63 LQE2021-41 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning internal photoemission microscopy (SIPM). First, we performed SIPM measurement without scanning a laser beam to characterize stability of this measurement system, and revealed the energy resolution of Schottky barrier height (q$phi$B) was less than 0.2 meV. Then, SIPM measurement was performed by scanning a laser beam in the electrodes of three kinds of Schottky contacts. Standard deviations of q$phi$B were 0.84, 3.22, and 5.11 meV, respectively. These values were more than four times larger than that in the fix-pointed measurement. Therefore, we demonstrated that this measurement has sufficient accuracy to characterize the uniformity of these Schottky contacts. In addition, we found that these Schottky contacts exhibit a standard deviation of q$phi$B below 10 meV. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Schottky contacts / SiC / GaN / α-Ga2O3 / scanning internal photoemission microscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 259, ED2021-29, pp. 67-70, Nov. 2021. |
Paper # |
ED2021-29 |
Date of Issue |
2021-11-18 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2021-29 CPM2021-63 LQE2021-41 Link to ES Tech. Rep. Archives: ED2021-29 CPM2021-63 LQE2021-41 |
Conference Information |
Committee |
ED CPM LQE |
Conference Date |
2021-11-25 - 2021-11-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2021-11-ED-CPM-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy |
Sub Title (in English) |
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Keyword(1) |
Schottky contacts |
Keyword(2) |
SiC |
Keyword(3) |
GaN |
Keyword(4) |
α-Ga2O3 |
Keyword(5) |
scanning internal photoemission microscopy |
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1st Author's Name |
Yuto Kawasumi |
1st Author's Affiliation |
University of Fukui (Univ. of Fukui) |
2nd Author's Name |
Fumimasa Horikiri |
2nd Author's Affiliation |
SCIOCS Co. (SCIOCS Co.) |
3rd Author's Name |
Noboru Fukuhara |
3rd Author's Affiliation |
SCIOCS Co. (SCIOCS Co.) |
4th Author's Name |
Tomoyoshi Mishima |
4th Author's Affiliation |
Hosei University (Hosei Univ.) |
5th Author's Name |
Takashi Shinohe |
5th Author's Affiliation |
FLOSFIA INC. (FLOSFIA INC.) |
6th Author's Name |
Kenji Shiojima |
6th Author's Affiliation |
University of Fukui (Univ. of Fukui) |
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Speaker |
Author-1 |
Date Time |
2021-11-26 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2021-29, CPM2021-63, LQE2021-41 |
Volume (vol) |
vol.121 |
Number (no) |
no.259(ED), no.260(CPM), no.261(LQE) |
Page |
pp.67-70 |
#Pages |
4 |
Date of Issue |
2021-11-18 (ED, CPM, LQE) |
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