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| Presentation | 2021-11-12 11:30 [Invited Talk] Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu)  SDM2021-62 Link to ES Tech. Rep. Archives: SDM2021-62 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numerical tables of electron distribution function which are updated by minute time-steps. This numerical method enables to obtain averaged mobility stably. The necessary insight for optimizing HEMT layer structures is obtained by understanding the effects of microscopic scattering models of two-dimensional electron gas on the mobility of HEMTs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / HEMT / mobility / temerature-dependence / modeling / 2DEG / cellular automaton / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 235, SDM2021-62, pp. 47-52, Nov. 2021. | |
| Paper # | SDM2021-62 | |
| Date of Issue | 2021-11-04 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-62 Link to ES Tech. Rep. Archives: SDM2021-62 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2021-11-11 - 2021-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | mobility |
| Keyword(4) | temerature-dependence |
| Keyword(5) | modeling |
| Keyword(6) | 2DEG |
| Keyword(7) | cellular automaton |
| Keyword(8) | |
| 1st Author's Name | Koichi Fukuda |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Junichi Hattori |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Hidehiro Asai |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Yaita Junya |
| 4th Author's Affiliation | Fujitsu Limited (Fujitsu) |
| 5th Author's Name | Junji Kotani |
| 5th Author's Affiliation | Fujitsu Limited (Fujitsu) |
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| Speaker | Author-1 |
| Date Time | 2021-11-12 11:30:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2021-62 |
| Volume (vol) | vol.121 |
| Number (no) | no.235 |
| Page | pp.47-52 |
| #Pages | 6 |
| Date of Issue | 2021-11-04 (SDM) |
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