Paper Abstract and Keywords |
Presentation |
2021-11-12 10:30
[Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics) SDM2021-61 Link to ES Tech. Rep. Archives: SDM2021-61 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put into practical use. However, its stress response has not been completely elucidated, and there are concerns about performance degradation by mechanical stress in the wafer process and packaging. On the other hand, stress engineering may improve its performance.
So, in this paper, we estimate the uniaxial stress impact on 4H-SiC by combination of first principle calculation and full-band Monte Carlo simulation. As a result, it was found that the stress dependence of the impact ionization coefficient of 4H-SiC is extremely small, and the risk of breakdown voltage degradation is low by small stress in manufacturing process. On the other hand, the electron mobility increases when tensile stress is applied, and it is expected that the device on-resistance will be reduced by stress engineering. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / wide bandgap semiconductor / power device / first principle calculation / full-band Monte Carlo simulation / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 235, SDM2021-61, pp. 43-46, Nov. 2021. |
Paper # |
SDM2021-61 |
Date of Issue |
2021-11-04 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2021-61 Link to ES Tech. Rep. Archives: SDM2021-61 |
Conference Information |
Committee |
SDM |
Conference Date |
2021-11-11 - 2021-11-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2021-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport |
Sub Title (in English) |
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Keyword(1) |
SiC |
Keyword(2) |
wide bandgap semiconductor |
Keyword(3) |
power device |
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first principle calculation |
Keyword(5) |
full-band Monte Carlo simulation |
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1st Author's Name |
Tomoya Nishimura |
1st Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
2nd Author's Name |
Katsumi Eikyu |
2nd Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
3rd Author's Name |
Kenichiro Sonoda |
3rd Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
4th Author's Name |
Tamotsu Ogata |
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Renesas Electronics Corporation (Renesas Electronics) |
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Speaker |
Author-1 |
Date Time |
2021-11-12 10:30:00 |
Presentation Time |
60 minutes |
Registration for |
SDM |
Paper # |
SDM2021-61 |
Volume (vol) |
vol.121 |
Number (no) |
no.235 |
Page |
pp.43-46 |
#Pages |
4 |
Date of Issue |
2021-11-04 (SDM) |
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