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Paper Abstract and Keywords
Presentation 2021-11-12 10:30
[Invited Talk] Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport
Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics) SDM2021-61 Link to ES Tech. Rep. Archives: SDM2021-61
Abstract (in Japanese) (See Japanese page) 
(in English) SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put into practical use. However, its stress response has not been completely elucidated, and there are concerns about performance degradation by mechanical stress in the wafer process and packaging. On the other hand, stress engineering may improve its performance.
So, in this paper, we estimate the uniaxial stress impact on 4H-SiC by combination of first principle calculation and full-band Monte Carlo simulation. As a result, it was found that the stress dependence of the impact ionization coefficient of 4H-SiC is extremely small, and the risk of breakdown voltage degradation is low by small stress in manufacturing process. On the other hand, the electron mobility increases when tensile stress is applied, and it is expected that the device on-resistance will be reduced by stress engineering.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / wide bandgap semiconductor / power device / first principle calculation / full-band Monte Carlo simulation / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 235, SDM2021-61, pp. 43-46, Nov. 2021.
Paper # SDM2021-61 
Date of Issue 2021-11-04 (SDM) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2021-61 Link to ES Tech. Rep. Archives: SDM2021-61

Conference Information
Committee SDM  
Conference Date 2021-11-11 - 2021-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2021-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) wide bandgap semiconductor  
Keyword(3) power device  
Keyword(4) first principle calculation  
Keyword(5) full-band Monte Carlo simulation  
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Keyword(7)  
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1st Author's Name Tomoya Nishimura  
1st Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
2nd Author's Name Katsumi Eikyu  
2nd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
3rd Author's Name Kenichiro Sonoda  
3rd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
4th Author's Name Tamotsu Ogata  
4th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
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Speaker Author-1 
Date Time 2021-11-12 10:30:00 
Presentation Time 60 minutes 
Registration for SDM 
Paper # SDM2021-61 
Volume (vol) vol.121 
Number (no) no.235 
Page pp.43-46 
#Pages
Date of Issue 2021-11-04 (SDM) 


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