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| Presentation | 2021-11-12 09:30 [Invited Talk] Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.)  SDM2021-60 Link to ES Tech. Rep. Archives: SDM2021-60 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by the defects at/near SiC/SiO$_{2}$ interface. We found that a high density of carbon atoms are detected in SiO$_{2}$ after annealing the interface in high-purity Ar, which provides indirect but unambiguous evidence of carbon defects residing at/near the interface. The atomic structures, formation energies, and electronic levels of candidate defects were calculated based on first principles. We demonstrated that a low interface state density of about 10$^{10}$ cm$^{-2}$eV$^{-1}$ could be obtained by avoiding the oxidation of SiC, which is most likely due to the suppression of carbon defects. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / SiO2 / MOSFET / Interface States / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 235, SDM2021-60, pp. 38-42, Nov. 2021. | |
| Paper # | SDM2021-60 | |
| Date of Issue | 2021-11-04 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-60 Link to ES Tech. Rep. Archives: SDM2021-60 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2021-11-11 - 2021-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | SiO2 |
| Keyword(3) | MOSFET |
| Keyword(4) | Interface States |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuma Kobayashi |
| 1st Author's Affiliation | Kyoto University/Tokyo Institute of Technology (Kyoto Univ./Tokyo Tech) |
| 2nd Author's Name | Takafumi Okuda |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 3rd Author's Name | Keita Tachiki |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Koji Ito |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 5th Author's Name | Yu-ichiro Matsushita |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 6th Author's Name | Tsunenobu Kimoto |
| 6th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-11-12 09:30:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2021-60 |
| Volume (vol) | vol.121 |
| Number (no) | no.235 |
| Page | pp.38-42 |
| #Pages | 5 |
| Date of Issue | 2021-11-04 (SDM) |
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